IXTQ69N30P The IXTQ69N30P is an N-Channel MOSFET from IXYS designed for high power applications. It features a 300V drain-source voltage and a 69A current rating.
Mfr Part #:

IXTQ69N30P

Available from 1 distributors
Mfr Name: IXYS
IXYS
The IXTQ69N30P is an N-Channel MOSFET from IXYS designed for high power applications. It features a 300V drain-source voltage and a 69A current rating.
Total Stock: 720 pcs
$ Price Range: $0.99

IXTQ69N30P Available from 1 distributor

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720 pcs
720 pcs On Request 1 On Request On Request 21+ On Request On Request

IXTQ69N30P Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
AEC Qualified
Automotive Grade
Current
Drain to Source Voltage (Vdss)
Drive Voltage (Max Rds On, Min Rds On)
FET Type
Gate Charge (Qg) (Max) @ Vgs
Industrial Grade
Input Capacitance (Ciss) (Max) @ Vds
Medical Grade
Military Grade
Mounting Type
Operating Temperature
Power Dissipation (Max)
Rds On (Max) @ Id, Vgs
Supplier Device Package
Supplier Package
Tape & Reel
Technology
Vgs (Max)
Vgs(th) (Max) @ Id

IXTQ69N30P Description

Short technical summary and product information.

The IXTQ69N30P is an N-Channel MOSFET manufactured by IXYS. This component is designed for power switching applications and features a high drain-to-source voltage rating of 300V and a continuous current capability of 69A at the case temperature.

 

Key electrical characteristics include a maximum Rds On of 49mOhm at 500mA and 10V, an input capacitance of 4960pF, and a gate charge of 180nC. The MOSFET operates within a temperature range of -55°C to 150°C (TJ).

 

This device is housed in a TO-3P package and utilizes through-hole mounting. The maximum power dissipation is rated at 500W (Tc), making it suitable for demanding thermal environments. The gate-to-source voltage has a maximum limit of ±20V, with a threshold voltage of 5V at 250µA.

 

The IXTQ69N30P is specified with RoHS3 compliance and an MSL of 1. Its robust specifications make it a suitable choice for various power electronics designs.

IXTQ69N30P Quick Information

Product Type: MOSFET
Canonical Name: IXTQ69N30P N-Channel MOSFET
Subcategory: N-Channel

IXTQ69N30P Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected

IXTQ69N30P Estimated Pricing

Qty Low High
1+ $0.99 $0.99

Estimated market price range - modelled values for guidance only, not live distributor offers.

IXTQ69N30P Features

  • N-Channel MOSFET with 300V drain-source voltage.
  • High continuous current rating of 69A.
  • Low Rds On of 49mOhm at 500mA, 10V.
  • TO-3P package for power applications.
  • Through hole mounting for easy integration.

IXTQ69N30P Applications

  • Suitable for high-power switching.
  • Used in power supply circuits.
  • Ideal for motor control applications.
  • Applicable in industrial automation.

IXTQ69N30P FAQs

6 frequently asked questions generated from this part’s specifications.
What is the maximum drain-to-source voltage for the IXTQ69N30P?

The maximum drain-to-source voltage (Vdss) is 300 V.

What is the continuous current rating of the IXTQ69N30P?

The continuous current rating is 69A at the case temperature.

What is the Rds On (Max) for the IXTQ69N30P?

The Rds On (Max) is 49mOhm at an Id of 500mA and Vgs of 10V.

What is the operating temperature range of the IXTQ69N30P?

The operating temperature range is -55°C to 150°C (TJ).

What package type is the IXTQ69N30P?

The package type is TO-3P-3, SC-65-3, with the supplier package being TO-3P.

How is the IXTQ69N30P mounted?

The mounting type is Through Hole.

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