| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
287 pcs
|
287 pcs | On Request | 1 | On Request | On Request | 10+ | On Request | On Request | |
|
25 pcs
|
25 pcs | On Request | 1 | On Request | On Request | 18+17 | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Current | |
| Drain to Source Voltage (Vdss) | |
| Drive Voltage (Max Rds On, Min Rds On) | |
| FET Type | |
| Gate Charge (Qg) (Max) @ Vgs | |
| Input Capacitance (Ciss) (Max) @ Vds | |
| Mounting Type | |
| Operating Temperature | |
| Power Dissipation (Max) | |
| Rds On (Max) @ Id, Vgs | |
| Supplier Device Package | |
| Supplier Package | |
| Tape & Reel | |
| Technology | |
| Vgs (Max) | |
| Vgs(th) (Max) @ Id |
The IXTQ60N20T is a N-Channel MOSFET manufactured by IXYS. It features a maximum drain-source voltage of 200V, a continuous drain current of 60A, and a maximum power dissipation of 500W. The device has a Rds On (Max) of 0.04 Ohm at 30A and 10V Vgs, with a gate charge of 73 nC at 10V. It is designed for high-voltage switching and power management applications. The package type is TO-3P-3, with through-hole mounting, suitable for robust industrial and power electronics. The operating temperature range is from -55°C to 175°C. It is marked as RoHS3 compliant, though verification is unconfirmed. The device is intended for use in power supplies, motor drives, and high-voltage switching circuits.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.99 | $0.99 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
200 V
TO-3P-3
-55°C to 175°C
Yes, RoHS3 compliant