| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
4,000 pcs
|
4000 pcs | On Request | 1 | On Request | On Request | 21+ | On Request | On Request | |
|
1,050 pcs
|
1050 pcs | On Request | 1 | On Request | On Request | 20+ | On Request | On Request |
| Category | |
| Manufacturer Name | |
| AEC Qualified | |
| Automotive Grade | |
| Current | |
| Drain to Source Voltage (Vdss) | |
| Drive Voltage (Max Rds On, Min Rds On) | |
| FET Type | |
| Gate Charge (Qg) (Max) @ Vgs | |
| Industrial Grade | |
| Input Capacitance (Ciss) (Max) @ Vds | |
| Medical Grade | |
| Military Grade | |
| Mounting Type | |
| Operating Temperature | |
| Power Dissipation (Max) | |
| Rds On (Max) @ Id, Vgs | |
| Supplier Device Package | |
| Tape & Reel | |
| Technology | |
| Vgs (Max) | |
| Vgs(th) (Max) @ Id |
The IXYS IXTQ50N25T is an N-Channel MOSFET with a maximum drain-to-source voltage (Vdss) of 250V and a continuous drain current (Id) of 50A at 25°C. It offers a low on-resistance (Rds(on)) of 60mOhm at 25A and 10V gate drive voltage, contributing to high power density.
This MOSFET is constructed using Trench Gate technology and features an N-Channel enhancement mode. It has a maximum power dissipation of 400W (Tc) and operates within a temperature range of -55°C to 150°C (TJ).
The IXTQ50N25T is designed for through-hole mounting and comes in a TO-3P package. Its key electrical characteristics include a gate charge (Qg) of 78 nC at 10V and an input capacitance (Ciss) of 4000 pF at 25V.
Applications for this MOSFET include DC-DC converters, battery chargers, switch-mode power supplies, and motor drives, benefiting from its high current handling capability and low Rds(on).
| Qty | Low | High |
|---|---|---|
| 1+ | $0.99 | $0.99 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The maximum drain-to-source voltage (Vdss) is 250V.
The continuous drain current (Id) is 50A at 25°C.
The maximum on-resistance (Rds(on)) is 60mOhm when the drain current is 25A and the gate-source voltage is 10V.
The operating temperature range (TJ) is from -55°C to 150°C.
The IXTQ50N25T is supplied in a TO-3P package.
This MOSFET is designed for through-hole mounting.