IXTQ50N25T The IXYS IXTQ50N25T is an N-Channel MOSFET designed for high current applications. It features a 250V drain-to-source voltage and 50A continuous drain current.
Mfr Part #:

IXTQ50N25T

Available from 2 distributors
Mfr Name: IXYS
IXYS
The IXYS IXTQ50N25T is an N-Channel MOSFET designed for high current applications. It features a 250V drain-to-source voltage and 50A continuous drain current.
Total Stock: 5,050 pcs
$ Price Range: $0.99

IXTQ50N25T Available from 2 distributors

Authorised
Non-Authorised
Distributor Stock Pricing MOQ PKG Lead Time Date Code On Order Quantity On Order Delivery
Non-Authorised Inventory information
4,000 pcs
4000 pcs On Request 1 On Request On Request 21+ On Request On Request
Non-Authorised Inventory information
1,050 pcs
1050 pcs On Request 1 On Request On Request 20+ On Request On Request

IXTQ50N25T Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
AEC Qualified
Automotive Grade
Current
Drain to Source Voltage (Vdss)
Drive Voltage (Max Rds On, Min Rds On)
FET Type
Gate Charge (Qg) (Max) @ Vgs
Industrial Grade
Input Capacitance (Ciss) (Max) @ Vds
Medical Grade
Military Grade
Mounting Type
Operating Temperature
Power Dissipation (Max)
Rds On (Max) @ Id, Vgs
Supplier Device Package
Tape & Reel
Technology
Vgs (Max)
Vgs(th) (Max) @ Id

IXTQ50N25T Description

Short technical summary and product information.

The IXYS IXTQ50N25T is an N-Channel MOSFET with a maximum drain-to-source voltage (Vdss) of 250V and a continuous drain current (Id) of 50A at 25°C. It offers a low on-resistance (Rds(on)) of 60mOhm at 25A and 10V gate drive voltage, contributing to high power density.

 

This MOSFET is constructed using Trench Gate technology and features an N-Channel enhancement mode. It has a maximum power dissipation of 400W (Tc) and operates within a temperature range of -55°C to 150°C (TJ).

 

The IXTQ50N25T is designed for through-hole mounting and comes in a TO-3P package. Its key electrical characteristics include a gate charge (Qg) of 78 nC at 10V and an input capacitance (Ciss) of 4000 pF at 25V.

 

Applications for this MOSFET include DC-DC converters, battery chargers, switch-mode power supplies, and motor drives, benefiting from its high current handling capability and low Rds(on).

IXTQ50N25T Quick Information

Product Type: MOSFET
Series: Trench Gate
Canonical Name: IXYS IXTQ50N25T N-Channel MOSFET
Subcategory: N-Channel

IXTQ50N25T Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected

IXTQ50N25T Estimated Pricing

Qty Low High
1+ $0.99 $0.99

Estimated market price range - modelled values for guidance only, not live distributor offers.

IXTQ50N25T Features

  • N-Channel MOSFET with 250V drain-source voltage.
  • Continuous drain current of 50A at 25°C.
  • Low on-resistance of 60mOhm at 25A, 10V.
  • 400W maximum power dissipation.
  • TO-3P package with through-hole mounting.

IXTQ50N25T Applications

  • Suitable for DC-DC converters.
  • Used in battery charger circuits.
  • Ideal for switch-mode power supplies.
  • Applicable for AC and DC motor drives.
  • Designed for high-speed power switching.

IXTQ50N25T FAQs

6 frequently asked questions generated from this part’s specifications.
What is the maximum drain-to-source voltage for the IXTQ50N25T?

The maximum drain-to-source voltage (Vdss) is 250V.

What is the continuous drain current rating at 25°C?

The continuous drain current (Id) is 50A at 25°C.

What is the maximum on-resistance for this MOSFET?

The maximum on-resistance (Rds(on)) is 60mOhm when the drain current is 25A and the gate-source voltage is 10V.

What is the operating temperature range?

The operating temperature range (TJ) is from -55°C to 150°C.

What type of package does the IXTQ50N25T use?

The IXTQ50N25T is supplied in a TO-3P package.

How is the IXTQ50N25T mounted?

This MOSFET is designed for through-hole mounting.

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