| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
4,600 pcs
|
4600 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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| Manufacturer Name | |
| Current | |
| Drain to Source Voltage (Vdss) | |
| Drive Voltage (Max Rds On, Min Rds On) | |
| FET Type | |
| Gate Charge (Qg) (Max) @ Vgs | |
| Input Capacitance (Ciss) (Max) @ Vds | |
| Mounting Type | |
| Operating Temperature | |
| Power Dissipation (Max) | |
| Rds On (Max) @ Id, Vgs | |
| Supplier Device Package | |
| Technology | |
| Vgs (Max) | |
| Vgs(th) (Max) @ Id |
The IXTQ30N60P is a high-performance N-Channel MOSFET from IXYS, designed for demanding applications. It features a robust 600V drain-source breakdown voltage and a continuous drain current rating of 30A.
Key electrical characteristics include a low Rds On of 240mOhm at 15A and 10V, a gate charge of 82nC, and an input capacitance of 5050pF. The MOSFET operates with a gate-source voltage range of ±30V and a drive voltage of 10V for maximum Rds On.
This device is built using MOSFET (Metal Oxide) technology and is configured as a single N-Channel enhancement mode transistor. It is suitable for applications requiring efficient power switching and control.
The IXTQ30N60P is housed in a TO-3P package and is designed for through-hole mounting. It operates within a temperature range of -55°C to 150°C and has a power dissipation capability of 540W.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.99 | $0.99 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The maximum drain-source voltage is 600 V.
The continuous drain current is 30 A.
The Rds On is a maximum of 240 mOhms at 15A and 10V.
The operating temperature range is -55°C to 150°C.
It is available in a TO-3P-3, SC-65-3 package.
It is designed for through-hole mounting.