| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
204 pcs
|
204 pcs | On Request | 1 | On Request | On Request | 12+ | On Request | On Request |
| Category | |
| Manufacturer Name | |
| AEC Qualified | |
| Automotive Grade | |
| Current | |
| Drain to Source Voltage (Vdss) | |
| Drive Voltage (Max Rds On, Min Rds On) | |
| FET Type | |
| Gate Charge (Qg) (Max) @ Vgs | |
| Industrial Grade | |
| Input Capacitance (Ciss) (Max) @ Vds | |
| Medical Grade | |
| Military Grade | |
| Mounting Type | |
| Operating Temperature | |
| Power Dissipation (Max) | |
| Rds On (Max) @ Id, Vgs | |
| Storage Temperature | |
| Supplier Device Package | |
| Tape & Reel | |
| Technology | |
| Vgs (Max) | |
| Vgs(th) (Max) @ Id | |
| Weight |
The IXYS IXTQ26N50P is a robust N-Channel Power MOSFET featuring a 500V drain-to-source breakdown voltage (VDSS) and a continuous drain current rating of 26A at 25°C.
This MOSFET boasts a low on-resistance (RDS(on)) of 230mΩ at 13A and 10V gate drive, contributing to efficient power handling. Its maximum power dissipation is rated at 400W (Tc), making it suitable for demanding applications. The device operates across a wide temperature range from -55°C to 150°C (TJ).
Designed with international standard packages in mind, the IXTQ26N50P is available in the TO-3P package, facilitating easy mounting and high power density. It is avalanche rated and features low package inductance, simplifying drive and protection circuitry.
Key electrical characteristics include a gate charge (Qg) of 65nC and input capacitance (Ciss) of 3600pF. The integrated source-drain diode provides essential protection features. This MOSFET is suitable for various power switching and control applications where high voltage and current capabilities are required.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.99 | $0.99 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The maximum drain-to-source voltage (VDSS) for the IXTQ26N50P is 500 V.
The continuous drain current (ID) at 25°C for the IXTQ26N50P is 26 A.
The maximum on-resistance (RDS(on)) for the IXTQ26N50P is 230 mΩ at 13A and 10V.
The operating temperature range for the IXTQ26N50P is -55°C to 150°C (TJ).
The IXTQ26N50P is supplied in the TO-3P package.