| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
4,500 pcs
|
4500 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Current | |
| Drain to Source Voltage (Vdss) | |
| Drive Voltage (Max Rds On, Min Rds On) | |
| FET Type | |
| Gate Charge (Qg) (Max) @ Vgs | |
| Input Capacitance (Ciss) (Max) @ Vds | |
| Mounting Type | |
| Operating Temperature | |
| Power Dissipation (Max) | |
| Rds On (Max) @ Id, Vgs | |
| Storage Temperature | |
| Supplier Device Package | |
| Supplier Package | |
| Tape & Reel | |
| Technology | |
| Vgs (Max) | |
| Vgs(th) (Max) @ Id |
The IXYS IXTQ200N10T is an N-Channel MOSFET designed for high-power applications. It offers a robust 100V drain-source voltage and a continuous drain current capability of 200A at 25°C case temperature.
Key electrical characteristics include a low on-resistance (Rds On) of 5.5mOhm at 50A and 10V gate drive, and a gate charge of 152 nC at 10V. The device operates within a wide temperature range of -55°C to 175°C (TJ) and has a maximum power dissipation of 550W.
This MOSFET is housed in a TO-3P package and is designed for through-hole mounting. Its specifications make it suitable for various power switching and control applications where high current and voltage handling are required.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.99 | $0.99 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The maximum drain-source voltage (Vdss) for the IXTQ200N10T is 100V.
The continuous drain current (Tc) for the IXTQ200N10T is 200A.
The Rds On (Max) for the IXTQ200N10T is 5.5mOhm at 50A drain current and 10V gate-source voltage.
The operating temperature range for the IXTQ200N10T is -55°C to 175°C (TJ).
The IXTQ200N10T is supplied in a TO-3P-3, SC-65-3 package.
The IXTQ200N10T is designed for through-hole mounting.