| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
3,222 pcs
|
3222 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request | |
|
3,016 pcs
|
3016 pcs | On Request | 1 | On Request | On Request | 20+ | On Request | On Request | |
|
100 pcs
|
100 pcs | On Request | 1 | On Request | On Request | 20+ | On Request | On Request |
| Category | |
| Manufacturer Name | |
| AEC Qualified | |
| Automotive Grade | |
| Current | |
| Drain to Source Voltage (Vdss) | |
| Drive Voltage (Max Rds On, Min Rds On) | |
| FET Type | |
| Gate Charge (Qg) (Max) @ Vgs | |
| Industrial Grade | |
| Input Capacitance (Ciss) (Max) @ Vds | |
| Medical Grade | |
| Military Grade | |
| Mounting Type | |
| Operating Temperature | |
| Power Dissipation (Max) | |
| Rds On (Max) @ Id, Vgs | |
| Supplier Device Package | |
| Supplier Package | |
| Tape & Reel | |
| Technology | |
| Vgs (Max) | |
| Vgs(th) (Max) @ Id |
The IXTQ130N10T is a power MOSFET manufactured by IXYS, categorized as an N-Channel device. It is designed for robust performance with a maximum drain-source voltage (Vdss) of 100V and a continuous current rating of 130A at a case temperature (Tc).
Key electrical characteristics include a maximum on-resistance (Rds On) of 9.1mOhm at 25A and 10V gate drive, a gate charge (Qg) of 104nC at 10V, and an input capacitance (Ciss) of 5080pF at 25V. The gate threshold voltage (Vgs(th)) is 4.5V at 250µA, with a maximum gate-source voltage (Vgs) of ±20V.
This MOSFET is housed in a TO-3P-3, SC-65-3 package, suitable for through-hole mounting. It operates within a wide temperature range of -55°C to 175°C (TJ), with a maximum power dissipation of 360W (Tc). The RoHS status is listed as RoHS3 Compliant, and it has a Moisture Sensitivity Level (MSL) of 1.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.99 | $0.99 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The maximum drain-source voltage (Vdss) for the IXTQ130N10T is 100V.
The IXTQ130N10T has a continuous current rating of 130A at the case temperature.
The maximum on-resistance (Rds On) for the IXTQ130N10T is 9.1mOhm when measured at 25A and 10V.
The IXTQ130N10T operates between -55°C and 175°C (TJ).
The IXTQ130N10T is supplied in a TO-3P-3, SC-65-3 package.
This MOSFET is designed for through-hole mounting.