IXTP96P085T The IXYS IXTP96P085T is a P-Channel MOSFET designed for high-side switching applications. It offers a breakdown voltage of 85V and a continuous drain current of 96A.
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IXTP96P085T

Available from 1 distributors
Mfr Name: IXYS
IXYS
The IXYS IXTP96P085T is a P-Channel MOSFET designed for high-side switching applications. It offers a breakdown voltage of 85V and a continuous drain current of 96A.
Total Stock: 1,383 pcs
$ Price Range: $0.99

IXTP96P085T Available from 1 distributor

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IXTP96P085T Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
Current
Drain to Source Voltage (Vdss)
Drive Voltage (Max Rds On, Min Rds On)
FET Type
Gate Charge (Qg) (Max) @ Vgs
Input Capacitance (Ciss) (Max) @ Vds
Mounting Type
Operating Temperature
Power Dissipation (Max)
Rds On (Max) @ Id, Vgs
Storage Temperature
Supplier Device Package
Tape & Reel
Technology
Vgs (Max)
Vgs(th) (Max) @ Id

IXTP96P085T Description

Short technical summary and product information.

The IXYS IXTP96P085T is a P-Channel enhancement mode Power MOSFET featuring an avalanche rating and extended FBSOA. It is designed for applications requiring high-side switching, push-pull amplifiers, and DC choppers.

 

Key electrical specifications include a Drain to Source Voltage (Vdss) of 85V and a continuous Drain Current (ID25) of 96A at 25°C. The On-Resistance (RDS(on)) is a maximum of 13mΩ at 48A and 10V gate drive. The device operates within a temperature range of -55°C to 150°C (TJ).

 

Packaged in a standard TO-220-3 configuration, the IXTP96P085T is suitable for through-hole mounting. Its features include low RDS(ON) and low QG, making it advantageous for space savings and high power density designs. The MOSFET also incorporates a fast intrinsic diode.

 

Applications for this MOSFET include automatic test equipment, current regulators, and battery charger systems. Its robust design and specifications make it a reliable component for demanding power management tasks.

IXTP96P085T Quick Information

Product Type: MOSFET
Series: IXTP96P085T
Canonical Name: IXYS IXTP96P085T P-Channel MOSFET
Subcategory: Single FETs, MOSFETs

IXTP96P085T Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected

IXTP96P085T Estimated Pricing

Qty Low High
1+ $0.99 $0.99

Estimated market price range - modelled values for guidance only, not live distributor offers.

IXTP96P085T Features

  • P-Channel MOSFET with 85V breakdown voltage.
  • Continuous drain current of 96A at 25°C.
  • Low on-resistance of 13mΩ maximum.
  • TO-220-3 package for through-hole mounting.
  • Wide operating temperature range of -55°C to 150°C.

IXTP96P085T Applications

  • Ideal for high-side switching circuits.
  • Suitable for push-pull amplifier designs.
  • Used in DC chopper applications.
  • Applicable for automatic test equipment.
  • Effective for current regulator circuits.

IXTP96P085T FAQs

5 frequently asked questions generated from this part’s specifications.
What is the maximum drain-source voltage for the IXTP96P085T?

The maximum drain-source voltage (Vdss) for the IXTP96P085T is 85V.

What is the continuous drain current rating of the IXTP96P085T?

The continuous drain current (Id) for the IXTP96P085T is 96A at 25°C.

What is the typical on-resistance of the IXTP96P085T?

The typical on-resistance (Rds(on)) for the IXTP96P085T is 13mΩ at 48A and 10V gate drive.

What is the operating temperature range for the IXTP96P085T?

The operating temperature range (TJ) for the IXTP96P085T is -55°C to 150°C.

What package type is the IXTP96P085T supplied in?

The IXTP96P085T is supplied in a TO-220-3 package.

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