| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
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1,383 pcs
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1383 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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| Tape & Reel | |
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| Vgs (Max) | |
| Vgs(th) (Max) @ Id |
The IXYS IXTP96P085T is a P-Channel enhancement mode Power MOSFET featuring an avalanche rating and extended FBSOA. It is designed for applications requiring high-side switching, push-pull amplifiers, and DC choppers.
Key electrical specifications include a Drain to Source Voltage (Vdss) of 85V and a continuous Drain Current (ID25) of 96A at 25°C. The On-Resistance (RDS(on)) is a maximum of 13mΩ at 48A and 10V gate drive. The device operates within a temperature range of -55°C to 150°C (TJ).
Packaged in a standard TO-220-3 configuration, the IXTP96P085T is suitable for through-hole mounting. Its features include low RDS(ON) and low QG, making it advantageous for space savings and high power density designs. The MOSFET also incorporates a fast intrinsic diode.
Applications for this MOSFET include automatic test equipment, current regulators, and battery charger systems. Its robust design and specifications make it a reliable component for demanding power management tasks.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.99 | $0.99 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The maximum drain-source voltage (Vdss) for the IXTP96P085T is 85V.
The continuous drain current (Id) for the IXTP96P085T is 96A at 25°C.
The typical on-resistance (Rds(on)) for the IXTP96P085T is 13mΩ at 48A and 10V gate drive.
The operating temperature range (TJ) for the IXTP96P085T is -55°C to 150°C.
The IXTP96P085T is supplied in a TO-220-3 package.