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IXTP80N10T The IXYS IXTP80N10T is an N-Channel MOSFET with a 100V drain-source voltage and 80A continuous current rating. It features a low 14mOhm maximum on-resistance at 25A and 10V.
Mfr Part #:

IXTP80N10T

Available from 1 distributors
Mfr Name: IXYS
IXYS
The IXYS IXTP80N10T is an N-Channel MOSFET with a 100V drain-source voltage and 80A continuous current rating. It features a low 14mOhm maximum on-resistance at 25A and 10V.
✓ Total Stock: 5,000 pcs
$ Price Range: $0.99

IXTP80N10T Available from 1 distributor

✓ Authorised
✓ Non-Authorised
Distributor Stock Pricing MOQ PKG Lead Time Date Code On Order Quantity On Order Delivery
Components Technology Group, Inc. ✓
Non-Authorised Inventory information
5,000 pcs
On Request
5000 pcs On Request 1 On Request On Request On Request On Request On Request
DistyParts aggregates offers from multiple distributors. Final prices, lead times and terms are subject to the distributors' discretion and may change without prior notice. DistyParts is not liable for any discrepancies.

IXTP80N10T Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
Current
Drain to Source Voltage (Vdss)
Drive Voltage (Max Rds On, Min Rds On)
FET Type
Gate Charge (Qg) (Max) @ Vgs
Input Capacitance (Ciss) (Max) @ Vds
Mounting Type
Operating Temperature
Power Dissipation (Max)
Rds On (Max) @ Id, Vgs
Storage Temperature
Supplier Device Package
Supplier Package
Tape & Reel
Technology
Vgs (Max)
Vgs(th) (Max) @ Id
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IXTP80N10T Description

Short technical summary and product information.

The IXYS IXTP80N10T is an N-Channel Power MOSFET designed for high current switching applications. It offers a drain-source voltage (Vdss) of 100V and a continuous drain current (Id) of 80A at 25°C case temperature.

 

Key electrical characteristics include an ultra-low on-resistance (Rds(on)) of 14mOhm maximum at 25A and 10V gate-source voltage, and a gate charge (Qg) of 60nC maximum at 10V. The device operates within a wide temperature range of -55°C to 175°C.

 

This MOSFET is packaged in a TO-220-3 through-hole configuration, making it easy to mount. It features avalanche rating and a fast intrinsic diode, contributing to its robustness and performance in demanding applications.

 

Applications include automotive systems, DC/DC converters, off-line UPS, and primary switching for 24V and 48V systems.

IXTP80N10T Quick Information

Product Type: MOSFET
Canonical Name: IXYS IXTP80N10T N-Channel MOSFET
Subcategory: N-Channel

IXTP80N10T Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected

IXTP80N10T Estimated Pricing

Qty Low High
1+ $0.99 $0.99

Estimated market price range - modelled values for guidance only, not live distributor offers.

IXTP80N10T Features

  • 100V drain-source voltage rating.
  • 80A continuous drain current.
  • 14mOhm maximum on-resistance.
  • TO-220-3 through-hole package.
  • Avalanche rated with fast intrinsic diode.

IXTP80N10T Applications

  • Automotive motor drives.
  • DC/DC converters.
  • Off-line UPS systems.
  • Primary switch for 24V/48V systems.

IXTP80N10T FAQs

6 frequently asked questions generated from this part’s specifications.
What is the maximum drain-source voltage for the IXTP80N10T?

The maximum drain-source voltage (Vdss) is 100V.

What is the continuous drain current rating of the IXTP80N10T?

The continuous drain current (Id) is 80A at 25°C case temperature.

What is the maximum on-resistance for the IXTP80N10T?

The maximum on-resistance (Rds On) is 14mOhm when measured at 25A drain current and 10V gate-source voltage.

What is the operating temperature range for this MOSFET?

The operating junction temperature range is -55°C to 175°C.

What package type is the IXTP80N10T supplied in?

The IXTP80N10T is supplied in a TO-220-3 package.

Is the IXTP80N10T RoHS compliant?

Yes, the RoHS status is RoHS3 Compliant.

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