| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
290 pcs
|
290 pcs | On Request | 1 | On Request | On Request | 1341+ | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Current | |
| Drain to Source Voltage (Vdss) | |
| Drive Voltage (Max Rds On, Min Rds On) | |
| FET Type | |
| Gate Charge (Qg) (Max) @ Vgs | |
| Input Capacitance (Ciss) (Max) @ Vds | |
| Mounting Type | |
| Operating Temperature | |
| Power Dissipation (Max) | |
| Rds On (Max) @ Id, Vgs | |
| Storage Temperature | |
| Supplier Device Package | |
| Tape & Reel | |
| Technology | |
| Vgs (Max) | |
| Vgs(th) (Max) @ Id |
The IXYS IXTP76N075T is an N-Channel MOSFET designed for power switching applications. It offers a drain-source voltage (Vdss) of 75V and a continuous current rating of 76A at a case temperature (Tc).
Key electrical characteristics include a maximum on-resistance (Rds On) of 12mOhm at 25A and 10V, an input capacitance (Ciss) of 2580pF at 25V, and a gate charge (Qg) of 57nC at 10V. The gate threshold voltage (Vgs(th)) is a maximum of 4V at 50µA, with a maximum gate-source voltage (Vgs) of ±20V.
This MOSFET operates within a temperature range of -55°C to 175°C (TJ) and has a power dissipation of 176W (Tc). It is constructed using MOSFET (Metal Oxide) technology.
The component is housed in a TO-220-3 package and utilizes a through-hole mounting type. It is listed as RoHS3 compliant and has a Moisture Sensitivity Level (MSL) of 1.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.99 | $0.99 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The drain-to-source voltage (Vdss) is 75V.
The continuous current rating is 76A.
The maximum on-resistance (Rds On) is 12mOhm at 25A and 10V.
The operating temperature range is -55°C to 175°C.
The IXTP76N075T is in a TO-220-3 package.
It is a through-hole mounted component.