IXTP6N50D2 The IXYS IXTP6N50D2 is an N-Channel MOSFET with a 500V drain-source breakdown voltage and a continuous drain current of 6A. It features a low Rds On resistance of 500mOhm at 3A, 0V.
Mfr Part #:

IXTP6N50D2

Available from 1 distributors
Mfr Name: IXYS
IXYS
The IXYS IXTP6N50D2 is an N-Channel MOSFET with a 500V drain-source breakdown voltage and a continuous drain current of 6A. It features a low Rds On resistance of 500mOhm at 3A, 0V.
Total Stock: 5,000 pcs
$ Price Range: $0.99

IXTP6N50D2 Available from 1 distributor

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IXTP6N50D2 Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
Current
Drain to Source Voltage (Vdss)
FET Feature
FET Type
Gate Charge (Qg) (Max) @ Vgs
Height
Input Capacitance (Ciss) (Max) @ Vds
Length
Mounting Type
Operating Temperature
Power Dissipation (Max)
Rds On (Max) @ Id, Vgs
Storage Temperature
Supplier Device Package
Tape & Reel
Technology
Vgs (Max)
Width

IXTP6N50D2 Description

Short technical summary and product information.

The IXYS IXTP6N50D2 is a depletion mode N-Channel MOSFET designed for power applications. It offers a high drain-source breakdown voltage of 500V and can handle a continuous drain current of 6A. The MOSFET exhibits a low drain-source on-resistance of 500mOhm when measured at 3A and 0V gate-source voltage.

 

This device operates within a temperature range of -55°C to 150°C and has a maximum power dissipation of 300W. Key electrical parameters include a gate charge of 96 nC at 5V and an input capacitance of 2800 pF at 25V. The maximum gate-source voltage is ±20V.

 

The IXTP6N50D2 is packaged in a TO-220-3 through-hole configuration. Its dimensions are 16mm in height, 10.66mm in length, and 4.83mm in width. The technology used is MOSFET (Metal Oxide).

 

Additional electrical characteristics include a minimum forward transconductance of 2.8 S, a fall time of 43 ns, a rise time of 72 ns, a typical turn-off delay time of 82 ns, and a typical turn-on delay time of 28 ns.

IXTP6N50D2 Quick Information

Product Type: MOSFET
Series: Ixtp6n50
Canonical Name: IXYS IXTP6N50D2 N-Channel MOSFET
Subcategory: MOSFETs

IXTP6N50D2 Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected

IXTP6N50D2 Estimated Pricing

Qty Low High
1+ $0.99 $0.99

Estimated market price range - modelled values for guidance only, not live distributor offers.

IXTP6N50D2 Features

  • 500V drain-source breakdown voltage.
  • 6A continuous drain current.
  • 500mOhm maximum drain-source on-resistance.
  • Depletion mode N-Channel MOSFET.
  • TO-220-3 through-hole package.

IXTP6N50D2 Applications

  • Used in high-voltage power switching circuits
  • Suitable for motor control applications
  • Ideal for power supply regulation
  • Applied in industrial automation systems

IXTP6N50D2 FAQs

6 frequently asked questions generated from this part’s specifications.
What is the drain-source breakdown voltage?

The drain-source breakdown voltage is 500V.

What is the continuous drain current?

The continuous drain current is 6A.

What is the Rds On resistance?

The Rds On resistance is a maximum of 500mOhm at 3A, 0V.

What is the operating temperature range?

The operating temperature range is -55°C to 150°C.

What package is this MOSFET in?

This MOSFET is in a TO-220-3 package.

What is the gate charge?

The gate charge is 96 nC at 5V.

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