| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
6,900 pcs
|
6900 pcs | On Request | 1 | On Request | On Request | 22+ | On Request | On Request |
| Category | |
| Manufacturer Name | |
| AEC Qualified | |
| Automotive Grade | |
| Current | |
| Drain to Source Voltage (Vdss) | |
| Drive Voltage (Max Rds On, Min Rds On) | |
| FET Type | |
| Gate Charge (Qg) (Max) @ Vgs | |
| Industrial Grade | |
| Input Capacitance (Ciss) (Max) @ Vds | |
| Medical Grade | |
| Military Grade | |
| Mounting Type | |
| Operating Temperature | |
| Power Dissipation (Max) | |
| Rds On (Max) @ Id, Vgs | |
| Supplier Device Package | |
| Supplier Package | |
| Tape & Reel | |
| Technology | |
| Vgs (Max) | |
| Vgs(th) (Max) @ Id |
The IXTP60N20T is an N-Channel MOSFET manufactured by IXYS, designed for high current applications. It features a maximum drain-source voltage (Vdss) of 200V and a continuous drain current (Id) of 60A at 25°C case temperature.
This MOSFET offers a low on-state resistance (Rds On) of up to 40mOhm at 30A and 10V gate-source voltage, contributing to efficient power handling. The gate threshold voltage (Vgs(th)) is a maximum of 5V at 250µA, and the maximum gate-to-source voltage is ±20V.
With a maximum power dissipation of 500W (Tc) and an operating temperature range of -55°C to 175°C (TJ), the IXTP60N20T is suitable for demanding thermal environments. It includes input capacitance (Ciss) of 4530 pF and gate charge (Qg) of 73 nC.
The component is packaged in a TO-220-3 package and utilizes through-hole mounting. Its technology is based on Metal Oxide Semiconductor Field-Effect Transistor (MOSFET) principles.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.99 | $0.99 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The maximum drain-source voltage (Vdss) for the IXTP60N20T is 200V.
The continuous drain current (Id) rating for the IXTP60N20T is 60A at a case temperature of 25°C.
The maximum on-resistance (Rds On) for the IXTP60N20T is 40mOhm when tested at 30A drain current and 10V gate-source voltage.
The IXTP60N20T MOSFET operates within a temperature range of -55°C to 175°C (TJ).
The IXTP60N20T MOSFET is supplied in a TO-220-3 package.