IXTP4N65X2 The IXYS IXTP4N65X2 is an N-Channel MOSFET designed for power applications. It features a 650V drain-source voltage and a 4A continuous drain current.
Mfr Part #:

IXTP4N65X2

Available from 1 distributors
Mfr Name: IXYS
IXYS
The IXYS IXTP4N65X2 is an N-Channel MOSFET designed for power applications. It features a 650V drain-source voltage and a 4A continuous drain current.
Total Stock: 246 pcs
$ Price Range: $0.99

IXTP4N65X2 Available from 1 distributor

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Non-Authorised
Distributor Stock Pricing MOQ PKG Lead Time Date Code On Order Quantity On Order Delivery
Non-Authorised Inventory information
246 pcs
246 pcs On Request 1 On Request On Request 1503+ On Request On Request

IXTP4N65X2 Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
AEC Qualified
Automotive Grade
Current
Drain to Source Voltage (Vdss)
Drive Voltage (Max Rds On, Min Rds On)
FET Type
Gate Charge (Qg) (Max) @ Vgs
Industrial Grade
Input Capacitance (Ciss) (Max) @ Vds
Medical Grade
Military Grade
Mounting Type
Operating Temperature
Power Dissipation (Max)
Rds On (Max) @ Id, Vgs
Supplier Device Package
Tape & Reel
Technology
Vgs (Max)
Vgs(th) (Max) @ Id

IXTP4N65X2 Description

Short technical summary and product information.

The IXYS IXTP4N65X2 is an N-Channel MOSFET with a maximum drain-source voltage of 650V and a continuous drain current of 4A at 25°C. It offers a low on-resistance of 850mOhm at 2A drain current and 10V gate drive voltage. The gate threshold voltage is 5V at 250µA, and the maximum gate-source voltage is ±30V.

 

This MOSFET operates within a temperature range of -55°C to 150°C (TJ). It utilizes MOSFET (Metal Oxide) technology and is housed in a TO-220-3 package, suitable for through-hole mounting. The maximum power dissipation is rated at 80W (Tc).

 

Key electrical characteristics include an input capacitance of 455pF at 25V and a gate charge of 8.3nC at 10V. The IXTP4N65X2 is designed for various power switching applications where high voltage and moderate current handling are required.

IXTP4N65X2 Quick Information

Product Type: MOSFET
Canonical Name: IXYS IXTP4N65X2 N-Channel MOSFET
Subcategory: N-Channel

IXTP4N65X2 Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected

IXTP4N65X2 Estimated Pricing

Qty Low High
1+ $0.99 $0.99

Estimated market price range - modelled values for guidance only, not live distributor offers.

IXTP4N65X2 Features

  • 650V drain-to-source voltage rating.
  • 4A continuous drain current capability.
  • 850mOhm maximum on-resistance.
  • TO-220 package for through-hole mounting.
  • Operates from -55°C to 150°C.

IXTP4N65X2 Applications

  • Suitable for power supply circuits.
  • Used in motor control applications.
  • Ideal for lighting control systems.
  • Applicable in industrial power modules.

IXTP4N65X2 FAQs

6 frequently asked questions generated from this part’s specifications.
What is the maximum drain-to-source voltage for the IXTP4N65X2?

The maximum drain-to-source voltage (Vdss) is 650 V.

What is the continuous drain current of the IXTP4N65X2?

The continuous drain current (Id) is 4A (Tc).

What is the maximum on-resistance for the IXTP4N65X2?

The maximum on-resistance (Rds On) is 850mOhm at 2A drain current and 10V gate voltage.

What is the operating temperature range of the IXTP4N65X2?

The operating temperature range is -55°C to 150°C (TJ).

What package type is the IXTP4N65X2 available in?

The IXTP4N65X2 is available in a TO-220-3 package.

How is the IXTP4N65X2 mounted?

The IXTP4N65X2 is designed for through-hole mounting.

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