IXTP3N120 The IXYS IXTP3N120 is an N-Channel MOSFET designed for high voltage applications. It offers a 1200V drain-source voltage and 3A continuous current in a TO-220-3 package.
Mfr Part #:

IXTP3N120

Available from 3 distributors
Mfr Name: IXYS
IXYS
The IXYS IXTP3N120 is an N-Channel MOSFET designed for high voltage applications. It offers a 1200V drain-source voltage and 3A continuous current in a TO-220-3 package.
Total Stock: 5,407 pcs
$ Price Range: $0.99

IXTP3N120 Available from 3 distributors

Authorised
Non-Authorised
Distributor Stock Pricing MOQ PKG Lead Time Date Code On Order Quantity On Order Delivery
Non-Authorised Inventory information
2,000 pcs
2000 pcs On Request 1 On Request On Request 21+ On Request On Request
Non-Authorised Inventory information
2,000 pcs
2000 pcs On Request 1 On Request On Request 21+ On Request On Request
Non-Authorised Inventory information
1,407 pcs
1407 pcs On Request 1 On Request On Request On Request On Request On Request

IXTP3N120 Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
AEC Qualified
Automotive Grade
Current
Drain to Source Voltage (Vdss)
Drive Voltage (Max Rds On, Min Rds On)
FET Type
Gate Charge (Qg) (Max) @ Vgs
Industrial Grade
Input Capacitance (Ciss) (Max) @ Vds
Lead Spacing
Medical Grade
Military Grade
Mounting Type
Operating Temperature
Power Dissipation (Max)
Rds On (Max) @ Id, Vgs
Supplier Device Package
Supplier Package
Tape & Reel
Technology
Vgs (Max)
Vgs(th) (Max) @ Id

IXTP3N120 Description

Short technical summary and product information.

The IXYS IXTP3N120 is a single N-Channel Power MOSFET featuring a high drain-source voltage (Vdss) of 1200V and a continuous drain current (Id) of 3A at 25°C case temperature. It has a maximum on-resistance (Rds On) of 4.5 Ohms at 500mA and 10V gate-source voltage.

 

This MOSFET is constructed using MOSFET (Metal Oxide) technology and is rated for a maximum power dissipation of 200W. The operating temperature range is -55°C to 150°C (TJ).

 

The IXTP3N120 is housed in a TO-220-3 package, designed for through-hole mounting. Key electrical characteristics include an input capacitance (Ciss) of 1350 pF and a gate charge (Qg) of 42 nC.

 

This component is suitable for high voltage power supplies and pulse circuit applications.

IXTP3N120 Quick Information

Product Type: MOSFET
Canonical Name: IXTP3N120 N-Channel Power MOSFET
Subcategory: Single

IXTP3N120 Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected

IXTP3N120 Estimated Pricing

Qty Low High
1+ $0.99 $0.99

Estimated market price range - modelled values for guidance only, not live distributor offers.

IXTP3N120 Features

  • 1200V drain-source voltage rating.
  • 3A continuous drain current.
  • 4.5 Ohm maximum on-resistance.
  • TO-220-3 through-hole package.
  • Wide operating temperature range.

IXTP3N120 Applications

  • Suitable for high-voltage power supply circuits.
  • Used in capacitor discharge applications.
  • Ideal for pulse circuit switching.
  • Applicable in high-voltage inverter designs.

IXTP3N120 FAQs

5 frequently asked questions generated from this part’s specifications.
What is the maximum drain-source voltage for the IXTP3N120?

The maximum drain-source voltage (Vdss) for the IXTP3N120 is 1200V.

What is the continuous drain current of the IXTP3N120?

The continuous drain current (Id) for the IXTP3N120 is 3A at 25°C case temperature.

What is the on-resistance of the IXTP3N120?

The maximum on-resistance (Rds On) for the IXTP3N120 is 4.5 Ohms at 500mA drain current and 10V gate-source voltage.

What is the operating temperature range for the IXTP3N120?

The operating temperature range for the IXTP3N120 is -55°C to 150°C (TJ).

What package type is the IXTP3N120 supplied in?

The IXTP3N120 is supplied in a TO-220-3 package.

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