| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
964 pcs
|
964 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Current | |
| Drain to Source Voltage (Vdss) | |
| Drive Voltage (Max Rds On, Min Rds On) | |
| FET Type | |
| Gate Charge (Qg) (Max) @ Vgs | |
| Input Capacitance (Ciss) (Max) @ Vds | |
| Mounting Type | |
| Operating Temperature | |
| Power Dissipation (Max) | |
| Rds On (Max) @ Id, Vgs | |
| Supplier Device Package | |
| Supplier Package | |
| Technology | |
| Vgs (Max) | |
| Vgs(th) (Max) @ Id |
The IXYS IXTP3N100P is an N-Channel Power MOSFET with a maximum drain-to-source voltage (Vdss) of 1000V. It is rated for a continuous drain current (Id) of 3A at 25°C case temperature and can dissipate up to 125W.
This MOSFET features a low on-resistance (Rds On) of 4.8 Ohms maximum at 1.5A and 10V gate drive voltage. The gate-to-source threshold voltage (Vgs(th)) is a maximum of 4.5V at 250µA. Input capacitance (Ciss) is 1100 pF at 25V, and gate charge (Qg) is 39 nC at 10V.
The device operates within a temperature range of -55°C to 150°C (TJ). It is housed in a TO-220-3 package and utilizes Through Hole mounting.
Applications for this MOSFET include switched-mode and resonant-mode power supplies, DC-DC converters, laser drivers, AC and DC motor controls, and robotics.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.99 | $0.99 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The maximum drain-to-source voltage is 1000V.
The continuous drain current is 3A at 25°C case temperature.
The maximum on-resistance is 4.8 Ohms at 1.5A and 10V.
The operating temperature range is -55°C to 150°C (TJ).
The IXTP3N100P is in a TO-220-3 package.
It is mounted using the Through Hole method.