IXTP34N65X2 The IXYS IXTP34N65X2 is an N-Channel MOSFET with a 650V drain-source voltage and 34A continuous drain current. It is housed in a TO-220-3 package.
Mfr Part #:

IXTP34N65X2

Available from 1 distributors
Mfr Name: IXYS
IXYS
The IXYS IXTP34N65X2 is an N-Channel MOSFET with a 650V drain-source voltage and 34A continuous drain current. It is housed in a TO-220-3 package.
Total Stock: 248 pcs
$ Price Range: $0.99

IXTP34N65X2 Available from 1 distributor

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IXTP34N65X2 Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
AEC Qualified
Automotive Grade
Current
Drain to Source Voltage (Vdss)
Drive Voltage (Max Rds On, Min Rds On)
FET Type
Gate Charge (Qg) (Max) @ Vgs
Industrial Grade
Input Capacitance (Ciss) (Max) @ Vds
Medical Grade
Military Grade
Mounting Type
Operating Temperature
Power Dissipation (Max)
Rds On (Max) @ Id, Vgs
Supplier Device Package
Tape & Reel
Technology
Vgs (Max)
Vgs(th) (Max) @ Id

IXTP34N65X2 Description

Short technical summary and product information.

The IXYS IXTP34N65X2 is an N-Channel MOSFET designed for power applications. It features a maximum drain-source voltage (Vdss) of 650V and a continuous drain current (Id) of 34A at 25°C.

 

The MOSFET has a maximum on-resistance (Rds On) of 96mOhm at 17A and 10V gate drive voltage. The gate threshold voltage (Vgs(th)) is 5V at 250µA, with a maximum gate-source voltage (Vgs) of ±30V. Input capacitance (Ciss) is rated at 3000pF at 25V.

 

With a maximum power dissipation of 540W (Tc) and an operating temperature range of -55°C to 150°C (TJ), this component is suitable for demanding thermal environments. The technology used is MOSFET (Metal Oxide).

 

This device is mounted using the Through Hole method and comes in a TO-220-3 package.

IXTP34N65X2 Quick Information

Product Type: MOSFET
Canonical Name: IXYS IXTP34N65X2 N-Channel MOSFET
Subcategory: Single FETs, MOSFETs

IXTP34N65X2 Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected

IXTP34N65X2 Estimated Pricing

Qty Low High
1+ $0.99 $0.99

Estimated market price range - modelled values for guidance only, not live distributor offers.

IXTP34N65X2 Features

  • 650V drain-source voltage rating.
  • 34A continuous drain current capability.
  • 96mOhm maximum on-resistance.
  • Operates from -55°C to 150°C.
  • Through Hole mounting in TO-220-3 package.

IXTP34N65X2 Applications

  • Suitable for power switching circuits.
  • Used in high voltage applications.
  • Ideal for power supply designs.
  • Applicable in motor control systems.

IXTP34N65X2 FAQs

7 frequently asked questions generated from this part’s specifications.
What is the maximum drain-source voltage for the IXTP34N65X2 MOSFET?

The maximum drain-source voltage (Vdss) for the IXTP34N65X2 is 650 V.

What is the continuous drain current of the IXTP34N65X2 at 25°C?

The continuous drain current (Id) at 25°C for the IXTP34N65X2 is 34 A (Tc).

What is the maximum on-resistance for the IXTP34N65X2?

The Rds On (Max) @ Id, Vgs is 96 mOhm at 17A, 10V.

What is the operating temperature range of the IXTP34N65X2?

The operating temperature range for the IXTP34N65X2 is -55°C to 150°C (TJ).

What type of MOSFET is the IXTP34N65X2?

The IXTP34N65X2 is an N-Channel MOSFET.

How is the IXTP34N65X2 MOSFET mounted?

The IXTP34N65X2 MOSFET is mounted Through Hole.

What is the package type for the IXTP34N65X2?

The package type for the IXTP34N65X2 is TO-220-3.

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