IXTP26P20P The IXYS IXTP26P20P is a P-Channel MOSFET with a 200V drain-source voltage and 26A continuous current rating. It features a low 170mOhm Rds(on) and is housed in a TO-220-3 package.
Mfr Part #:

IXTP26P20P

Available from 1 distributors
Mfr Name: IXYS
IXYS
The IXYS IXTP26P20P is a P-Channel MOSFET with a 200V drain-source voltage and 26A continuous current rating. It features a low 170mOhm Rds(on) and is housed in a TO-220-3 package.
Total Stock: 2 pcs
$ Price Range: $0.99

IXTP26P20P Available from 1 distributor

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IXTP26P20P Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
AEC Qualified
Automotive Grade
Current
Drain to Source Voltage (Vdss)
Drive Voltage (Max Rds On, Min Rds On)
FET Type
Gate Charge (Qg) (Max) @ Vgs
Industrial Grade
Input Capacitance (Ciss) (Max) @ Vds
Medical Grade
Military Grade
Mounting Type
Operating Temperature
Power Dissipation (Max)
Rds On (Max) @ Id, Vgs
Storage Temperature
Supplier Device Package
Supplier Package
Tape & Reel
Technology
Vgs (Max)
Vgs(th) (Max) @ Id

IXTP26P20P Description

Short technical summary and product information.

The IXYS IXTP26P20P is a P-Channel enhancement mode Power MOSFET designed for high-side switching applications. It offers a maximum drain-source voltage (Vdss) of 200V and a continuous drain current (Id) of 26A at 25°C.

 

Key electrical characteristics include a low on-resistance (Rds(on)) of 170mOhm at 13A and 10V gate-source voltage, a gate threshold voltage (Vgs(th)) between -2.5V and -4.5V, and a maximum gate-source voltage of ±20V. The MOSFET also features a fast intrinsic diode with a reverse recovery time (trr) of 240ns.

 

This device is packaged in a TO-220-3 through-hole configuration, suitable for various power management circuits. Its rugged PolarPTM process ensures improved gate, avalanche, and dynamic dV/dt ruggedness, making it suitable for applications such as push-pull amplifiers, DC choppers, and current regulators.

IXTP26P20P Quick Information

Product Type: MOSFET
Canonical Name: IXYS IXTP26P20P P-Channel Enhancement Mode Power MOSFET
Subcategory: Single

IXTP26P20P Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected

IXTP26P20P Estimated Pricing

Qty Low High
1+ $0.99 $0.99

Estimated market price range - modelled values for guidance only, not live distributor offers.

IXTP26P20P Features

  • P-Channel enhancement mode MOSFET.
  • 200V drain-source voltage rating.
  • 26A continuous drain current.
  • Low 170mOhm on-resistance.
  • TO-220-3 through-hole package.

IXTP26P20P Applications

  • Suitable for high-side switching.
  • Used in push-pull amplifiers.
  • Applicable for DC choppers.
  • Functions as current regulators.
  • Supports automatic test equipment.

IXTP26P20P FAQs

6 frequently asked questions generated from this part’s specifications.
What is the maximum drain-source voltage for the IXTP26P20P?

The maximum drain-source voltage (Vdss) for the IXTP26P20P is 200V.

What is the continuous drain current rating of the IXTP26P20P?

The continuous drain current (Id) for the IXTP26P20P is 26A at 25°C.

What is the typical on-resistance (Rds(on)) of the IXTP26P20P?

The typical on-resistance (Rds(on)) for the IXTP26P20P is 170mOhm at 13A drain current and 10V gate-source voltage.

What is the operating temperature range for the IXTP26P20P?

The operating temperature range for the IXTP26P20P is -55°C to 175°C.

What package type is the IXTP26P20P supplied in?

The IXTP26P20P is supplied in a TO-220-3 package.

How is the IXTP26P20P mounted?

The IXTP26P20P is mounted using the Through Hole method.

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