DistyParts Icon
IXTP1R4N120P The IXYS IXTP1R4N120P is an N-Channel Power MOSFET with a 1200V drain-to-source voltage and 1.4A continuous drain current. It is housed in a TO-220 package.
Mfr Part #:

IXTP1R4N120P

Available from 1 distributors
Mfr Name: IXYS
IXYS
The IXYS IXTP1R4N120P is an N-Channel Power MOSFET with a 1200V drain-to-source voltage and 1.4A continuous drain current. It is housed in a TO-220 package.
✓ Total Stock: 34 pcs
$ Price Range: $0.99

IXTP1R4N120P Available from 1 distributor

✓ Authorised
✓ Non-Authorised
Distributor Stock Pricing MOQ PKG Lead Time Date Code On Order Quantity On Order Delivery
Bristol Electronics ✓
Non-Authorised Inventory information
34 pcs
On Request
34 pcs On Request 1 On Request On Request On Request On Request On Request
DistyParts aggregates offers from multiple distributors. Final prices, lead times and terms are subject to the distributors' discretion and may change without prior notice. DistyParts is not liable for any discrepancies.

IXTP1R4N120P Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
Current
Drain to Source Voltage (Vdss)
Drive Voltage (Max Rds On, Min Rds On)
FET Type
Gate Charge (Qg) (Max) @ Vgs
Input Capacitance (Ciss) (Max) @ Vds
Mounting Type
Operating Temperature
Power Dissipation (Max)
Rds On (Max) @ Id, Vgs
Storage Temperature
Supplier Device Package
Tape & Reel
Technology
Vgs (Max)
Vgs(th) (Max) @ Id
Weight
View Similar Products (0)

IXTP1R4N120P Description

Short technical summary and product information.

This IXYS IXTP1R4N120P is an N-Channel enhancement mode Power MOSFET designed for high voltage applications. It features a maximum drain-to-source voltage (VDSS) of 1200V and a continuous drain current (ID25) of 1.4A at 25°C.

 

The MOSFET has a maximum on-resistance (RDS(on)) of 13 Ohms at 500mA and 10V gate drive voltage. The gate threshold voltage (Vgs(th)) is a maximum of 4.5V at 100µA. It operates across a wide temperature range from -55°C to 150°C.

 

Key electrical characteristics include a gate charge (Qg) of 24.8 nC at 10V and an input capacitance (Ciss) of 666 pF at 25V. The device is avalanche rated and has a fast intrinsic rectifier.

 

Packaged in a standard TO-220-3 configuration, this MOSFET is suitable for through-hole mounting. Its features make it applicable in DC-DC converters, switch-mode power supplies, and motor drives.

IXTP1R4N120P Quick Information

Product Type: Power MOSFET
Canonical Name: IXYS IXTP1R4N120P N-Channel Power MOSFET
Subcategory: N-Channel

IXTP1R4N120P Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected

IXTP1R4N120P Estimated Pricing

Qty Low High
1+ $0.99 $0.99

Estimated market price range - modelled values for guidance only, not live distributor offers.

IXTP1R4N120P Features

  • 1200V drain-to-source breakdown voltage.
  • 1.4A continuous drain current.
  • Maximum 13 Ohm on-resistance.
  • TO-220 package for through-hole mounting.
  • Avalanche rated with fast intrinsic rectifier.

IXTP1R4N120P Applications

  • Used in DC-DC converters.
  • Suitable for switch-mode power supplies.
  • Applicable for AC and DC motor drives.
  • Designed for high voltage pulse applications.

IXTP1R4N120P FAQs

7 frequently asked questions generated from this part’s specifications.
What is the maximum drain-to-source voltage for the IXTP1R4N120P?

The maximum drain-to-source voltage (VDSS) is 1200V.

What is the continuous drain current of the IXTP1R4N120P?

The continuous drain current (ID25) is 1.4A at 25°C.

What is the maximum on-resistance of the IXTP1R4N120P?

The maximum on-resistance (RDS(on)) is 13 Ohms when tested at 500mA drain current and 10V gate voltage.

What is the operating temperature range for this MOSFET?

The operating temperature range is -55°C to 150°C.

What package type is the IXTP1R4N120P available in?

The IXTP1R4N120P is available in a TO-220-3 package.

What is the gate charge for the IXTP1R4N120P?

The gate charge (Qg) is a maximum of 24.8 nC at 10V gate voltage.

What is the input capacitance of the IXTP1R4N120P?

The input capacitance (Ciss) is a maximum of 666 pF at 25V drain-source voltage and 1MHz frequency.

Home
Account

Categories