| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
824 pcs
|
824 pcs | On Request | 1 | On Request | On Request | 10+11+ | On Request | On Request |
| Category | |
| Manufacturer Name | |
| AEC Qualified | |
| Automotive Grade | |
| Current | |
| Drain to Source Voltage (Vdss) | |
| Drive Voltage (Max Rds On, Min Rds On) | |
| FET Type | |
| Gate Charge (Qg) (Max) @ Vgs | |
| Industrial Grade | |
| Input Capacitance (Ciss) (Max) @ Vds | |
| Medical Grade | |
| Military Grade | |
| Mounting Type | |
| Operating Temperature | |
| Power Dissipation (Max) | |
| Rds On (Max) @ Id, Vgs | |
| Supplier Device Package | |
| Supplier Package | |
| Tape & Reel | |
| Technology | |
| Vgs (Max) | |
| Vgs(th) (Max) @ Id |
This IXYS IXTP16N50P is an N-Channel MOSFET with a drain-source breakdown voltage of 500V and a continuous drain current rating of 16A. It offers a low on-resistance (Rds On) of 400mOhm when measured at 8A drain current and 10V gate-source voltage.
The MOSFET operates within a temperature range of -55°C to 150°C and has a maximum power dissipation of 300W. Key electrical characteristics include a gate charge of 43nC at 10V and an input capacitance of 2250pF at 25V.
Packaged in a TO-220-3 configuration, this component is designed for through-hole mounting. It utilizes MOSFET (Metal Oxide) technology and is suitable for various power switching applications where high voltage and current handling are required.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.99 | $0.99 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The maximum drain-source voltage is 500 V.
The continuous drain current is 16 A.
The Rds On (Max) is 400 mOhm.
The operating temperature range is -55°C to 150°C.
The MOSFET is supplied in a TO-220-3 package.
It is designed for through-hole mounting.