| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
100 pcs
|
100 pcs | On Request | 1 | On Request | On Request | 20+ | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Current | |
| Drain to Source Voltage (Vdss) | |
| Drive Voltage (Max Rds On, Min Rds On) | |
| FET Type | |
| Gate Charge (Qg) (Max) @ Vgs | |
| Input Capacitance (Ciss) (Max) @ Vds | |
| Mounting Type | |
| Operating Temperature | |
| Power Dissipation (Max) | |
| Rds On (Max) @ Id, Vgs | |
| Supplier Device Package | |
| Technology | |
| Vgs (Max) | |
| Vgs(th) (Max) @ Id |
The IXYS IXTP140P05T is a P-Channel Power MOSFET designed for various switching applications. It offers a maximum drain-source voltage (Vdss) of 50V and a continuous drain current (Id) of 140A at 25°C.
Key electrical characteristics include a low on-resistance (Rds On) of 9mΩ at 70A and 10V gate-source voltage, and a gate threshold voltage (Vgs(th)) of 4V at 250µA. The input capacitance (Ciss) is 13.5nF at 25V, and the gate charge (Qg) is 200nC at 10V.
This MOSFET operates within a temperature range of -55°C to 150°C (TJ). It is packaged in a standard TO-220-3 configuration, suitable for through-hole mounting. The device is rated for a maximum power dissipation of 298W at 25°C.
Applications for this MOSFET include high-side switching, push-pull amplifiers, DC choppers, automatic test equipment, current regulators, and battery charger circuits.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.99 | $0.99 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The maximum drain-source voltage (Vdss) for the IXTP140P05T is 50V.
The continuous drain current (Id) at 25°C is 140A.
The Rds On is a maximum of 9mOhm at 70A and 10V.
The operating temperature range (TJ) is -55°C to 150°C.
The IXTP140P05T is available in a TO-220-3 package.