| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
1,556 pcs
|
1556 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Current | |
| Drain to Source Voltage (Vdss) | |
| Drive Voltage (Max Rds On, Min Rds On) | |
| FET Type | |
| Gate Charge (Qg) (Max) @ Vgs | |
| Input Capacitance (Ciss) (Max) @ Vds | |
| Mounting Type | |
| Operating Temperature | |
| Power Dissipation (Max) | |
| Rds On (Max) @ Id, Vgs | |
| Storage Temperature | |
| Supplier Device Package | |
| Tape & Reel | |
| Technology | |
| Vgs (Max) | |
| Vgs(th) (Max) @ Id |
This IXYS IXTP10P50P is a P-Channel enhancement mode Power MOSFET designed for various applications. It features a high drain-source voltage (Vdss) of 500V and a continuous drain current (Id25) of 10A at 25°C.
The MOSFET exhibits a maximum on-resistance (Rds On) of 1 Ohm at 5A and 10V gate-source voltage, with a gate threshold voltage (Vgs(th)) of 4V at 250µA. Its power dissipation capability is rated at 300W (Tc).
Key electrical characteristics include an input capacitance (Ciss) of 2840 pF and a gate charge (Qg) of 50 nC. The device operates within a temperature range of -55°C to 150°C (TJ).
Packaged in a standard TO-220-3 through-hole configuration, the IXTP10P50P is suitable for applications requiring high voltage switching and power control.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.99 | $0.99 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The maximum drain-source voltage (Vdss) for the IXTP10P50P is 500V.
The continuous drain current (Id25) is 10A at 25°C.
The maximum on-resistance (Rds On) is 1 Ohm at 5A and 10V.
The operating temperature range is -55°C to 150°C (TJ).
The IXTP10P50P is supplied in a TO-220-3 package.