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40 pcs
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40 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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The IXTP05N100M is an N-Channel MOSFET transistor manufactured by isc. It is designed for various electronic applications requiring robust switching capabilities. Key electrical specifications include a drain-source breakdown voltage of 100V, a continuous drain current of 5A, and an on-state resistance of 0.26 Ohms.
This MOSFET features a gate-source threshold voltage of 4V and an input capacitance of 1000pF. It is housed in a standard TO-220 package, suitable for through-hole mounting. The component is specified as RoHS3 Compliant, MSL Level 1, and REACH Unaffected.
This part is suitable for power switching and amplification circuits where a reliable N-channel MOSFET is needed. Its specifications make it a versatile component for general-purpose electronic designs.
| Qty | Low | High |
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| 1+ | $0.99 | $0.99 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The drain-source breakdown voltage is 100V.
The continuous drain current is 5A.
The on-state resistance is 0.26 Ohms.
The package type is TO-220.
It is mounted using the through-hole method.
The gate-source threshold voltage is 4V.