| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
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1 pcs
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1 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Current | |
| Drain to Source Voltage (Vdss) | |
| Drive Voltage (Max Rds On, Min Rds On) | |
| FET Type | |
| Gate Charge (Qg) (Max) @ Vgs | |
| Input Capacitance (Ciss) (Max) @ Vds | |
| Mounting Type | |
| Operating Temperature | |
| Power Dissipation (Max) | |
| Rds On (Max) @ Id, Vgs | |
| Supplier Device Package | |
| Supplier Package | |
| Tape & Reel | |
| Technology | |
| Vgs (Max) | |
| Vgs(th) (Max) @ Id |
This IXYS IXTN40P50P is a P-Channel MOSFET designed for power switching applications. It offers a high drain-source voltage rating of 500V and can handle a continuous current of 40A at the case temperature.
The MOSFET features a low Rds On of 230mOhm at 500mA and 10V, with a gate charge of 205nC. Its input capacitance is rated at 11500pF. The device operates within a temperature range of -55°C to 150°C (TJ).
Packaged in a SOT-227B (miniBLOC) configuration, this MOSFET is suitable for chassis mounting. The technology used is MOSFET (Metal Oxide), and it is specified with a gate-source voltage limit of ±20V and a drive voltage of 10V.
Compliance information indicates RoHS3 compliance and an MSL of 1. REACH status is unaffected.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.99 | $0.99 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The maximum drain-source voltage (Vdss) for the IXTN40P50P is 500 V.
The IXTN40P50P has a continuous current rating of 40A at the case temperature.
The operating temperature range for the IXTN40P50P is -55°C to 150°C (TJ).
The Rds On is a maximum of 230mOhm at 500mA and 10V.
The IXTN40P50P is supplied in a SOT-227B package.