| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
9 pcs
|
9 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
| Category | |
| Manufacturer Name |
The IXTN36N50 is an N-Channel enhancement mode power MOSFET from IXYS, housed in a SOT-227-4 package for chassis mounting. This component is engineered for demanding applications, featuring a high drain-source voltage rating of 500V and a low drain-source on-resistance of 120mΩ. Its maximum power dissipation is rated at 350W, with a typical power dissipation of 400W, indicating its capability for handling significant power loads.
The operating temperature range for the IXTN36N50 is from -40°C to 150°C, making it suitable for a wide array of environmental conditions. The gate threshold voltage is typically 5V. With 4 terminals, this MOSFET offers robust performance for power switching and amplification circuits.
This MOSFET is suitable for various industrial and power electronics applications where high voltage and efficient power handling are critical. Its construction and specifications make it a reliable choice for designers working on power supplies, motor control, and other high-power systems.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.71 | $0.71 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The maximum drain-source voltage for the IXTN36N50 is 500V.
The typical drain-source on-resistance of the IXTN36N50 is 120mΩ.
The maximum power dissipation of the IXTN36N50 is 350W.
The operating temperature range for the IXTN36N50 is -40°C to 150°C.
The IXTN36N50 is available in the SOT-227-4 package.
The IXTN36N50 is designed for chassis mounting.