| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
45 pcs
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45 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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| Manufacturer Name | |
| Current | |
| Drain to Source Voltage (Vdss) | |
| FET Type | |
| Lead Spacing | |
| Mounting Type | |
| Power Dissipation (Max) | |
| Supplier Device Package | |
| Technology | |
| Vgs(th) (Max) @ Id |
The IXYS IXTN36N50 is an N-Channel enhancement mode power MOSFET. It is designed for applications requiring high voltage and current handling capabilities.
Key electrical specifications include a maximum drain-source voltage (Vdss) of 500V and a continuous current rating of 36A at the case temperature (Tc). The maximum power dissipation is rated at 400W (Tc), indicating its suitability for demanding thermal environments. The threshold voltage (Vgs(th)) is 4V at 20mA, and the drain-source on-resistance is 120mΩ.
This MOSFET is housed in a SOT-227-4, miniBLOC package, also referred to as SOT-227B. It features a chassis mount type, making it suitable for direct mounting onto heat sinks or chassis for effective thermal management.
The operating temperature range for the IXTN36N50 is from -40°C to 150°C. It is specified as RoHS3 compliant and has a Moisture Sensitivity Level (MSL) of 1.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.99 | $0.99 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The maximum drain-source voltage (Vdss) for the IXTN36N50 is 500V.
The IXTN36N50 has a continuous current rating of 36A at the case temperature.
The maximum power dissipation for the IXTN36N50 is 400W at the case temperature.
The IXTN36N50 is supplied in a SOT-227-4, miniBLOC package.
The IXTN36N50 is designed for chassis mounting.
The IXTN36N50 operates between -40°C and 150°C.