| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
150 pcs
|
150 pcs | On Request | 1 | On Request | On Request | 21+ | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Current | |
| Drain to Source Voltage (Vdss) | |
| Drive Voltage (Max Rds On, Min Rds On) | |
| FET Type | |
| Gate Charge (Qg) (Max) @ Vgs | |
| Input Capacitance (Ciss) (Max) @ Vds | |
| Mounting Type | |
| Operating Temperature | |
| Power Dissipation (Max) | |
| Rds On (Max) @ Id, Vgs | |
| Supplier Device Package | |
| Supplier Package | |
| Technology | |
| Vgs (Max) | |
| Vgs(th) (Max) @ Id |
The IXYS IXTN200N10L2 is a robust N-Channel MOSFET suitable for demanding power applications. It boasts a high drain-source voltage of 100V and can handle a continuous drain current of 178A at a case temperature.
This MOSFET offers a low on-state resistance of 11mOhm at 100A and 10V gate drive voltage, contributing to efficient power conversion. Key electrical characteristics include a gate charge of 540 nC and an input capacitance of 23000 pF.
Packaged in a SOT-227B (miniBLOC) case, the IXTN200N10L2 is designed for chassis mounting, facilitating effective heat dissipation. It operates within a wide temperature range of -55°C to 150°C (TJ).
This component is classified under MOSFET technology and is suitable for various power switching and control circuits where high current and voltage handling are required.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.99 | $0.99 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The maximum drain-source voltage (Vdss) is 100V.
The continuous current rating is 178A.
The maximum Rds On is 11mOhm when measured at 100A drain current and 10V gate-source voltage.
The operating temperature range is -55°C to 150°C (TJ).
It is supplied in a SOT-227B (miniBLOC) package.
The mounting type is chassis mount.