| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
1 pcs
|
1 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
| Category | |
| Manufacturer Name | |
| AEC Qualified | |
| Automotive Grade | |
| Current | |
| Drain to Source Voltage (Vdss) | |
| Drive Voltage (Max Rds On, Min Rds On) | |
| FET Type | |
| Gate Charge (Qg) (Max) @ Vgs | |
| Industrial Grade | |
| Input Capacitance (Ciss) (Max) @ Vds | |
| Medical Grade | |
| Military Grade | |
| Mounting Type | |
| Operating Temperature | |
| Power Dissipation (Max) | |
| Rds On (Max) @ Id, Vgs | |
| Supplier Device Package | |
| Tape & Reel | |
| Technology | |
| Vgs (Max) | |
| Vgs(th) (Max) @ Id |
This IXTM50N20 is an N-Channel MOSFET manufactured by IXYS, featuring a robust design suitable for various electronic applications. It offers a maximum drain-to-source voltage (Vdss) of 200V and can sustain a continuous drain current (Id) of 50A at 25°C.
The MOSFET technology utilizes a metal oxide semiconductor structure. Key electrical parameters include a maximum on-resistance (Rds On) of 45mOhm when tested at 25A drain current and 10V gate-source voltage. The gate threshold voltage (Vgs(th)) is specified at a maximum of 4V at 250µA. The device has a maximum gate-source voltage (Vgs Max) of ±20V and a maximum power dissipation of 300W.
Designed for through-hole mounting, the IXTM50N20 comes in a TO-204AE package. Its operating temperature range is from -55°C to 150°C (TJ), making it suitable for demanding environments. Input capacitance (Ciss) is rated at a maximum of 4600 pF at 25V, and gate charge (Qg) is a maximum of 220 nC at 10V gate drive voltage.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.99 | $0.99 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The maximum drain-to-source voltage (Vdss) for the IXTM50N20 is 200V.
The IXTM50N20 has a continuous drain current rating of 50A at 25°C.
The maximum Rds On for the IXTM50N20 is 45mOhm at a drain current of 25A and gate-source voltage of 10V.
The IXTM50N20 operates within a temperature range of -55°C to 150°C (TJ).
The IXTM50N20 is an N-Channel MOSFET.
The IXTM50N20 is supplied in a TO-204AE package.
The IXTM50N20 is designed for through-hole mounting.