| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
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65 pcs
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65 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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| Manufacturer Name | |
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| SVHC Present |
The IXTM2N100A is an N-Channel MOSFET manufactured by IXYS Corporation. This component features a high drain-source breakdown voltage of 1000V and a continuous drain current rating of 2A. It is designed for through-hole mounting and comes in a TO-204AC package, also referred to as TO-3.
This MOSFET is suitable for various power management applications where high voltage blocking is required. Its specifications make it a component for circuits needing reliable switching or amplification at elevated voltage levels. The TO-204AC package offers robust thermal performance for moderate power dissipation.
As an N-Channel MOSFET, the IXTM2N100A is controlled by a positive gate-source voltage. Its primary electrical characteristics include a 1000V drain-source voltage and a 2A continuous drain current. The TO-204AC (TO-3) package is a standard for power applications, facilitating heat dissipation through its metal can construction.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.99 | $0.99 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The drain-source breakdown voltage is 1000V.
The continuous drain current is 2A at 25°C.
The IXTM2N100A is supplied in a TO-204AC package, also known as TO-3.
The IXTM2N100A is designed for through-hole mounting.
