IXTK82N25P The IXYS IXTK82N25P is an N-Channel MOSFET with a 250V drain-source voltage and 82A continuous drain current. It is designed for through-hole mounting.
Mfr Part #:

IXTK82N25P

Available from 2 distributors
Mfr Name: IXYS
IXYS
The IXYS IXTK82N25P is an N-Channel MOSFET with a 250V drain-source voltage and 82A continuous drain current. It is designed for through-hole mounting.
Total Stock: 4,442 pcs
$ Price Range: $0.99

IXTK82N25P Available from 2 distributors

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Distributor Stock Pricing MOQ PKG Lead Time Date Code On Order Quantity On Order Delivery
Non-Authorised Inventory information
2,730 pcs
2730 pcs On Request 1 On Request On Request 21+ On Request On Request
Non-Authorised Inventory information
1,712 pcs
1712 pcs On Request 1 On Request On Request On Request On Request On Request

IXTK82N25P Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
Current
Drain to Source Voltage (Vdss)
Drive Voltage (Max Rds On, Min Rds On)
FET Type
Gate Charge (Qg) (Max) @ Vgs
Input Capacitance (Ciss) (Max) @ Vds
Mounting Type
Operating Temperature
Power Dissipation (Max)
Rds On (Max) @ Id, Vgs
Supplier Device Package
Technology
Vgs (Max)
Vgs(th) (Max) @ Id

IXTK82N25P Description

Short technical summary and product information.

The IXYS IXTK82N25P is an N-Channel MOSFET belonging to the Discrete Semiconductor Products category. It features a maximum drain-source voltage (Vdss) of 250V and a continuous drain current (Id) of 82A at 25°C.

 

Key electrical characteristics include a maximum on-state resistance (Rds On) of 35mOhm at 41A and 10V gate drive voltage. The gate threshold voltage (Vgs(th)) is 5V at 250µA, and the maximum gate-source voltage (Vgs) is ±20V. Input capacitance (Ciss) is rated at 4800 pF at 25V, and gate charge (Qg) is 142 nC at 10V.

 

This MOSFET has a maximum power dissipation of 500W (Tc) and operates within a temperature range of -55°C to 150°C (TJ). It is housed in a TO-264 package and features through-hole mounting.

 

The device is RoHS3 compliant, REACH unaffected, and has an MSL rating of 1.

IXTK82N25P Quick Information

Product Type: MOSFET
Canonical Name: IXYS IXTK82N25P N-Channel MOSFET
Subcategory: FETs, MOSFETs - Single

IXTK82N25P Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected

IXTK82N25P Estimated Pricing

Qty Low High
1+ $0.99 $0.99

Estimated market price range - modelled values for guidance only, not live distributor offers.

IXTK82N25P Features

  • N-Channel MOSFET technology.
  • 250V drain-source voltage rating.
  • 82A continuous drain current.
  • 35mOhm maximum on-state resistance.
  • TO-264 through-hole package.

IXTK82N25P Applications

  • Suitable for power switching circuits.
  • Used in high current applications.
  • Designed for robust thermal performance.
  • Industrial power supply designs.
  • Motor control applications.

IXTK82N25P FAQs

6 frequently asked questions generated from this part’s specifications.
What is the maximum drain-source voltage for the IXTK82N25P?

The maximum drain-source voltage (Vdss) for the IXTK82N25P is 250V.

What is the continuous drain current of the IXTK82N25P?

The continuous drain current (Id) for the IXTK82N25P is 82A at 25°C.

What is the maximum on-state resistance for this MOSFET?

The maximum on-state resistance (Rds On) for the IXTK82N25P is 35mOhm at 41A and 10V.

What is the operating temperature range of the IXTK82N25P?

The operating temperature range for the IXTK82N25P is -55°C to 150°C (TJ).

How is the IXTK82N25P mounted?

The IXTK82N25P is designed for through-hole mounting.

What package type is the IXTK82N25P supplied in?

The IXTK82N25P is supplied in a TO-264 (IXTK) package, specifically TO-264-3, TO-264AA.

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