| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
2 pcs
|
2 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Current | |
| Drain to Source Voltage (Vdss) | |
| Drive Voltage (Max Rds On, Min Rds On) | |
| FET Type | |
| Gate Charge (Qg) (Max) @ Vgs | |
| Input Capacitance (Ciss) (Max) @ Vds | |
| Mounting Type | |
| Operating Temperature | |
| Power Dissipation (Max) | |
| Rds On (Max) @ Id, Vgs | |
| Supplier Device Package | |
| Technology | |
| Vgs (Max) | |
| Vgs(th) (Max) @ Id |
This IXYS IXTK250N10 is an N-Channel MOSFET designed for high-power applications. It features a maximum drain-source voltage (Vdss) of 100V and can handle a continuous drain current of 250A at a case temperature (Tc).
The MOSFET has a low on-resistance (Rds On) of 5mOhm at 90A and 10V, with a gate charge (Qg) of 430 nC at 10V. Its input capacitance (Ciss) is 12700 pF at 25V. The gate threshold voltage (Vgs(th)) is 4V at 250µA, and the maximum gate-source voltage (Vgs) is ±20V.
Operating within a temperature range of -55°C to 150°C (TJ), this device utilizes MOSFET (Metal Oxide) technology. It is housed in a TO-264-3, TO-264AA package and is designed for through-hole mounting.
The IXTK250N10 is RoHS3 compliant, indicating adherence to environmental standards. Its moisture sensitivity level is MSL 1 Unlimited.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.99 | $0.99 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The maximum drain-source voltage (Vdss) for the IXTK250N10 is 100V.
The continuous drain current for the IXTK250N10 is 250A.
The on-resistance (Rds On) is a maximum of 5mOhm at 90A and 10V.
The operating temperature range is -55°C to 150°C (TJ).
The IXTK250N10 is designed for through-hole mounting.
The IXTK250N10 is in a TO-264-3, TO-264AA package.