| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
3 pcs
|
3 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
| Category | |
| Manufacturer Name | |
| AEC Qualified | |
| Automotive Grade | |
| Current | |
| Drain to Source Voltage (Vdss) | |
| Drive Voltage (Max Rds On, Min Rds On) | |
| FET Type | |
| Gate Charge (Qg) (Max) @ Vgs | |
| Industrial Grade | |
| Input Capacitance (Ciss) (Max) @ Vds | |
| Medical Grade | |
| Military Grade | |
| Mounting Type | |
| Operating Temperature | |
| Power Dissipation (Max) | |
| Rds On (Max) @ Id, Vgs | |
| Supplier Device Package | |
| Tape & Reel | |
| Technology | |
| Vgs (Max) | |
| Vgs(th) (Max) @ Id |
The IXTH90P10P from IXYS is a P-Channel MOSFET designed for power switching applications. It offers a drain-to-source voltage (Vdss) of 100V and can handle a continuous drain current (Id) of 90A at 25°C. The MOSFET exhibits a maximum on-resistance (Rds On) of 25mOhm at 45A and 10V gate drive voltage, with a gate threshold voltage (Vgs(th)) of 4V at 250µA.
Key electrical characteristics include a maximum gate charge (Qg) of 120 nC at 10V and a maximum gate-source voltage (Vgs) of ±20V. Input capacitance (Ciss) is rated at 5800 pF at 25V. The device has a power dissipation capability of 462W (Tc) and operates within a temperature range of -55°C to 175°C (TJ).
This MOSFET utilizes Metal Oxide Semiconductor (MOS) technology and is suitable for through-hole mounting. It comes in a TO-247-3 package, identified as TO-247 (IXTH) by the supplier. The P-Channel configuration makes it a versatile component for various power electronics designs.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.99 | $0.99 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The maximum drain-source voltage (Vdss) for the IXTH90P10P is 100V.
The IXTH90P10P has a continuous drain current rating of 90A at 25°C.
The maximum on-resistance (Rds On) for the IXTH90P10P is 25mOhm when measured at 45A drain current and 10V gate-source voltage.
The IXTH90P10P is supplied in a TO-247-3 package.
The operating temperature range for the IXTH90P10P is -55°C to 175°C (TJ).
The maximum gate threshold voltage (Vgs(th)) for the IXTH90P10P is 4V at 250µA.