| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
35 pcs
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35 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Current | |
| Drain to Source Voltage (Vdss) | |
| Drive Voltage (Max Rds On, Min Rds On) | |
| FET Type | |
| Gate Charge (Qg) (Max) @ Vgs | |
| Input Capacitance (Ciss) (Max) @ Vds | |
| Mounting Type | |
| Operating Temperature | |
| Power Dissipation (Max) | |
| Rds On (Max) @ Id, Vgs | |
| Storage Temperature | |
| Supplier Device Package | |
| Tape & Reel | |
| Technology | |
| Vgs (Max) | |
| Vgs(th) (Max) @ Id |
The IXYS IXTH6N90A is a high-voltage N-channel MOSFET designed for power switching applications. It offers a maximum drain-source voltage (Vdss) of 900V and a continuous drain current of 6A at 25°C case temperature.
Key electrical characteristics include a maximum on-resistance (Rds On) of 1.4 Ohms at 3A and 10V gate-source voltage, and a gate charge (Qg) of 130nC at 10V. The threshold voltage (Vgs(th)) is 4.5V at 250µA, with a maximum gate-source voltage of ±20V.
This MOSFET operates within a temperature range of -55°C to 150°C (TJ) and has a maximum power dissipation of 180W at 25°C case temperature. It is housed in a TO-247-3 package and designed for through-hole mounting.
The IXTH6N90A is suitable for various power electronics applications requiring high voltage and current handling capabilities.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.99 | $0.99 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The maximum drain-source voltage is 900V.
The continuous drain current is 6A at 25°C case temperature.
The maximum Rds On is 1.4 Ohms at 3A drain current and 10V gate-source voltage.
The operating temperature range is -55°C to 150°C (TJ).
The IXTH6N90A is supplied in a TO-247-3 package.
It is designed for through-hole mounting.