IXTH6N150 The IXYS IXTH6N150 is an N-Channel MOSFET designed for high voltage applications. It features a 1500V drain-source voltage and a 6A continuous drain current.
Mfr Part #:

IXTH6N150

Available from 1 distributors
Mfr Name: IXYS
IXYS
The IXYS IXTH6N150 is an N-Channel MOSFET designed for high voltage applications. It features a 1500V drain-source voltage and a 6A continuous drain current.
Total Stock: 1,000 pcs
$ Price Range: $0.99

IXTH6N150 Available from 1 distributor

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Non-Authorised
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IXTH6N150 Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
AEC Qualified
Automotive Grade
Current
Drain to Source Voltage (Vdss)
Drive Voltage (Max Rds On, Min Rds On)
FET Type
Gate Charge (Qg) (Max) @ Vgs
Industrial Grade
Input Capacitance (Ciss) (Max) @ Vds
Medical Grade
Military Grade
Mounting Type
Operating Temperature
Power Dissipation (Max)
Rds On (Max) @ Id, Vgs
Supplier Device Package
Tape & Reel
Technology
Vgs (Max)
Vgs(th) (Max) @ Id

IXTH6N150 Description

Short technical summary and product information.

This IXYS IXTH6N150 is an N-Channel MOSFET with a maximum drain-source voltage (Vdss) of 1500V and a continuous drain current (Tc) of 6A. It is packaged in a TO-247-3 case and designed for through-hole mounting.

 

The MOSFET operates within a temperature range of -55°C to 150°C (TJ). Key electrical characteristics include a maximum on-resistance (Rds On) of 3.5 Ohm at 500mA and 10V, a gate charge (Qg) of 67 nC at 10V, and an input capacitance (Ciss) of 2230 pF at 25V. The gate threshold voltage (Vgs(th)) is 5V at 250µA, with a maximum gate-source voltage (Vgs) of ±20V.

 

With a maximum power dissipation of 540W (Tc), this component is suitable for power switching applications requiring high voltage handling. The technology used is MOSFET (Metal Oxide).

 

Environmental compliance includes RoHS3 compliance, Moisture Sensitivity Level 1, and REACH unaffected status. The component is designed for through-hole mounting.

IXTH6N150 Quick Information

Product Type: MOSFET
Canonical Name: IXYS IXTH6N150 N-Channel MOSFET
Subcategory: N-Channel

IXTH6N150 Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected

IXTH6N150 Estimated Pricing

Qty Low High
1+ $0.99 $0.99

Estimated market price range - modelled values for guidance only, not live distributor offers.

IXTH6N150 Features

  • N-Channel MOSFET with 1500V drain-source voltage.
  • Continuous drain current of 6A at Tc.
  • Low Rds On of 3.5 Ohm maximum.
  • TO-247-3 package for through-hole mounting.
  • Wide operating temperature range of -55°C to 150°C.

IXTH6N150 Applications

  • Suitable for high voltage power supplies.
  • Used in power factor correction circuits.
  • Ideal for switching power applications.
  • Applicable in industrial motor control.

IXTH6N150 FAQs

4 frequently asked questions generated from this part’s specifications.
What is the maximum drain-source voltage for the IXTH6N150?

The maximum drain-source voltage (Vdss) for the IXTH6N150 is 1500 V.

What is the continuous drain current of the IXTH6N150?

The continuous drain current for the IXTH6N150 is 6A, measured at the case temperature (Tc).

What is the package type for the IXTH6N150?

The IXTH6N150 is supplied in a TO-247-3 package.

What is the operating temperature range of the IXTH6N150?

The operating temperature range for the IXTH6N150 is -55°C to 150°C (TJ).

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