IXTH6N120 The IXYS IXTH6N120 is an N-Channel Power MOSFET designed for high voltage applications. It features a 1200V drain-source voltage and a continuous drain current of 6A.
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IXTH6N120

Available from 1 distributors
Mfr Name: IXYS
IXYS
The IXYS IXTH6N120 is an N-Channel Power MOSFET designed for high voltage applications. It features a 1200V drain-source voltage and a continuous drain current of 6A.
Total Stock: 15 pcs
$ Price Range: $0.99

IXTH6N120 Available from 1 distributor

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IXTH6N120 Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
AEC Qualified
Automotive Grade
Current
Drain to Source Voltage (Vdss)
Drive Voltage (Max Rds On, Min Rds On)
FET Type
Gate Charge (Qg) (Max) @ Vgs
Industrial Grade
Input Capacitance (Ciss) (Max) @ Vds
Medical Grade
Military Grade
Mounting Type
Operating Temperature
Power Dissipation (Max)
Rds On (Max) @ Id, Vgs
Storage Temperature
Supplier Device Package
Tape & Reel
Technology
Vgs (Max)
Vgs(th) (Max) @ Id

IXTH6N120 Description

Short technical summary and product information.

The IXYS IXTH6N120 is a high-voltage N-Channel Power MOSFET. It is built using the HDMOSTM process and offers a low Rds(on) of 2.6 Ohms at 10V gate drive.

 

Key electrical specifications include a maximum drain-source voltage (Vdss) of 1200V and a continuous drain current (Id25) of 6A at 25°C. The device has a gate threshold voltage (Vgs(th)) of 5V maximum and can handle a continuous gate-source voltage of ±20V.

 

This MOSFET is housed in a standard TO-247 package, suitable for through-hole mounting. It operates across a wide temperature range from -55°C to 150°C (TJ), with a maximum junction temperature of 150°C. The power dissipation is rated at 300W at 25°C case temperature.

 

Features such as avalanche rating and low package inductance make it suitable for various power switching applications. The rugged polysilicon gate cell structure contributes to its reliability.

IXTH6N120 Quick Information

Product Type: MOSFET
Canonical Name: IXYS IXTH6N120 N-Channel Power MOSFET
Subcategory: N-Channel

IXTH6N120 Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected

IXTH6N120 Estimated Pricing

Qty Low High
1+ $0.99 $0.99

Estimated market price range - modelled values for guidance only, not live distributor offers.

IXTH6N120 Features

  • 1200V drain-source voltage rating.
  • 6A continuous drain current.
  • 2.6 Ohm maximum on-resistance.
  • TO-247 package for through-hole mounting.
  • Wide -55°C to 150°C operating temperature.

IXTH6N120 Applications

  • High-voltage power switching circuits
  • Motor control and inverter applications
  • Power supply regulation
  • High-voltage switching in industrial equipment

IXTH6N120 FAQs

6 frequently asked questions generated from this part’s specifications.
What is the maximum drain-source voltage (Vdss) for the IXTH6N120?

The maximum drain-source voltage (Vdss) is 1200V.

What is the continuous drain current (Id25) at 25°C?

The continuous drain current (Id25) at 25°C is 6A.

What is the maximum on-resistance (Rds(on))?

The maximum on-resistance (Rds(on)) is 2.6 Ohms at a gate voltage of 10V and a drain current of 3A.

What is the operating temperature range for this MOSFET?

The operating temperature range is -55°C to 150°C (TJ).

What package type is the IXTH6N120 supplied in?

The IXTH6N120 is supplied in a TO-247-3 package.

Is the IXTH6N120 RoHS compliant?

Yes, the RoHS status is RoHS3 Compliant.

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