| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
2,000 pcs
|
2000 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Current | |
| Drain to Source Voltage (Vdss) | |
| Drive Voltage (Max Rds On, Min Rds On) | |
| FET Type | |
| Gate Charge (Qg) (Max) @ Vgs | |
| Input Capacitance (Ciss) (Max) @ Vds | |
| Mounting Type | |
| Operating Temperature | |
| Power Dissipation (Max) | |
| Rds On (Max) @ Id, Vgs | |
| Supplier Device Package | |
| Technology | |
| Vgs (Max) | |
| Vgs(th) (Max) @ Id |
This N-Channel MOSFET from IXYS, part number IXTH52N65X, is suitable for various power electronic applications. It features a high drain-source voltage rating of 650V and can handle a continuous drain current of 52A at 25°C.
The MOSFET technology utilizes a Metal Oxide semiconductor structure. Key electrical characteristics include a maximum on-resistance (Rds On) of 68mOhm at 26A and 10V gate drive voltage, and a gate threshold voltage (Vgs(th)) of 5V at 250µA. The maximum gate-source voltage is ±30V.
Packaged in a TO-247-3 configuration, this component is designed for through-hole mounting. It operates within a temperature range of -55°C to 150°C (TJ). The maximum power dissipation is rated at 660W (Tc).
Compliance information indicates RoHS3 compliance, an MSL rating of 1 Unlimited, and REACH unaffected status. The part number is IXTH52N65X.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.99 | $0.99 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The maximum drain-source voltage (Vdss) is 650 V.
The continuous drain current (Id) is 52A at 25°C.
The Rds On is a maximum of 68mOhm at 26A drain current and 10V gate-source voltage.
The operating temperature range is -55°C to 150°C (TJ).
It is supplied in a TO-247-3 package.
Yes, it is RoHS3 Compliant.