| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
9,632 pcs
|
9632 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request | |
|
2,645 pcs
|
2645 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
| Category | |
| Manufacturer Name | |
| AEC Qualified | |
| Automotive Grade | |
| Current | |
| Drain to Source Voltage (Vdss) | |
| Drive Voltage (Max Rds On, Min Rds On) | |
| FET Type | |
| Gate Charge (Qg) (Max) @ Vgs | |
| Industrial Grade | |
| Input Capacitance (Ciss) (Max) @ Vds | |
| Medical Grade | |
| Military Grade | |
| Mounting Type | |
| Operating Temperature | |
| Power Dissipation (Max) | |
| Rds On (Max) @ Id, Vgs | |
| Supplier Device Package | |
| Supplier Package | |
| Tape & Reel | |
| Technology | |
| Vgs (Max) | |
| Vgs(th) (Max) @ Id |
The IXYS IXTH48N65X2 is a high-performance N-Channel MOSFET. It features a maximum drain-source voltage (Vdss) of 650V and a continuous drain current of 48A at a case temperature of Tc. The on-resistance (Rds On) is specified as a maximum of 68mOhm at 24A and 10V gate-source voltage.
This MOSFET has a gate charge (Qg) of 77 nC at 10V and an input capacitance (Ciss) of 4420 pF at 25V. The gate threshold voltage (Vgs(th)) is a maximum of 4.5V at 4mA, and the maximum gate-to-source voltage (Vgs) is ±30V. The drive voltage is 10V.
Packaged in a TO-247-3 case, this device is designed for through-hole mounting. It operates within a temperature range of -55°C to 150°C (TJ). The technology used is MOSFET (Metal Oxide).
Compliance information indicates RoHS3 compliance, MSL 1, and REACH unaffected status, though these are unverified.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.99 | $0.99 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The maximum drain-source voltage (Vdss) is 650V.
The continuous drain current is 48A at the case temperature.
The maximum on-resistance (Rds On) is 68mOhm at 24A drain current and 10V gate-source voltage.
The operating temperature range is -55°C to 150°C (TJ).
The MOSFET is supplied in a TO-247-3 package.
This component is designed for through-hole mounting.