| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
34,500 pcs
|
34500 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request | |
|
236 pcs
|
236 pcs | On Request | 1 | On Request | On Request | 1206+ | On Request | On Request |
| Category | |
| Manufacturer Name | |
| AEC Qualified | |
| Automotive Grade | |
| Current | |
| Drain to Source Voltage (Vdss) | |
| Drive Voltage (Max Rds On, Min Rds On) | |
| FET Type | |
| Gate Charge (Qg) (Max) @ Vgs | |
| Industrial Grade | |
| Input Capacitance (Ciss) (Max) @ Vds | |
| Medical Grade | |
| Military Grade | |
| Mounting Type | |
| Operating Temperature | |
| Power Dissipation (Max) | |
| Rds On (Max) @ Id, Vgs | |
| Supplier Device Package | |
| Tape & Reel | |
| Technology | |
| Vgs (Max) | |
| Vgs(th) (Max) @ Id |
This IXFM35N30 MOSFET from IXYS is an N-Channel device with a robust design suitable for various power applications. It offers a maximum drain-source voltage (Vdss) of 300V and a continuous drain current (Id) of 35A at 25°C (Tc), with a maximum power dissipation of 300W (Tc).
The MOSFET utilizes Metal Oxide Semiconductor (MOS) technology and has an Rds On (Max) of 100mOhm at 17.5A and 10V. The gate threshold voltage (Vgs(th)) is a maximum of 4V at 4mA, and the maximum gate-source voltage (Vgs) is ±20V. Input capacitance (Ciss) is rated at 4800 pF at 25V, and gate charge (Qg) is a maximum of 200 nC at 10V.
Operating across a temperature range of -55°C to 150°C (TJ), this component is housed in a TO-204AE package, designed for through-hole mounting. Its specifications make it suitable for power switching and amplification circuits where reliability and performance are critical.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.99 | $0.99 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The maximum drain-source voltage (Vdss) for the IXFM35N30 is 300V.
The continuous drain current (Id) for the IXFM35N30 is 35A at 25°C (Tc).
The maximum power dissipation for the IXFM35N30 is 300W (Tc).
The Rds On (Max) for the IXFM35N30 is 100mOhm at 17.5A and 10V.
The IXFM35N30 operates within a temperature range of -55°C to 150°C (TJ).
The IXFM35N30 is an N-Channel MOSFET.
The IXFM35N30 is supplied in a TO-204AE package.