IXTH26P20P The IXYS IXTH26P20P is a P-Channel MOSFET designed for high-side switching applications. It features a 200V drain-source voltage and 26A continuous current.
Mfr Part #:

IXTH26P20P

Available from 1 distributors
Mfr Name: IXYS
IXYS
The IXYS IXTH26P20P is a P-Channel MOSFET designed for high-side switching applications. It features a 200V drain-source voltage and 26A continuous current.
Total Stock: 1,207 pcs
$ Price Range: $0.99

IXTH26P20P Available from 1 distributor

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IXTH26P20P Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
AEC Qualified
Automotive Grade
Current
Drain to Source Voltage (Vdss)
Drive Voltage (Max Rds On, Min Rds On)
FET Type
Gate Charge (Qg) (Max) @ Vgs
Industrial Grade
Input Capacitance (Ciss) (Max) @ Vds
Medical Grade
Military Grade
Mounting Type
Operating Temperature
Power Dissipation (Max)
Rds On (Max) @ Id, Vgs
Supplier Device Package
Supplier Package
Tape & Reel
Technology
Vgs (Max)
Vgs(th) (Max) @ Id

IXTH26P20P Description

Short technical summary and product information.

The IXYS IXTH26P20P is a P-Channel MOSFET with a drain-source voltage (Vdss) of 200V and a continuous drain current (Id) of 26A at 25°C. It offers a low on-resistance (Rds(on)) of 170mOhm at 13A and 10V gate-source voltage, contributing to efficient power handling.

 

This MOSFET is suitable for applications requiring high-side switching, push-pull amplifiers, DC choppers, and current regulators. It is housed in a TO-247-3 package and supports through-hole mounting. The operating temperature range is -55°C to 175°C.

 

Key electrical characteristics include a gate charge (Qg) of 56 nC and an input capacitance (Ciss) of 2740 pF. The gate source threshold voltage (Vgs(th)) is a maximum of 4V at 250µA, and the continuous gate source voltage (Vgs) is ±20V. The device is rated for a maximum power dissipation of 300W at 25°C.

IXTH26P20P Quick Information

Product Type: MOSFET
Canonical Name: IXYS IXTH26P20P P-Channel MOSFET
Subcategory: P-Channel

IXTH26P20P Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected

IXTH26P20P Estimated Pricing

Qty Low High
1+ $0.99 $0.99

Estimated market price range - modelled values for guidance only, not live distributor offers.

IXTH26P20P Features

  • 200V P-Channel MOSFET for high-side switching.
  • 26A continuous drain current capability.
  • Low 170mOhm Rds(on) at 13A, 10V.
  • TO-247 package with through-hole mounting.
  • Wide -55°C to 175°C operating temperature.

IXTH26P20P Applications

  • Suitable for high-side switching.
  • Used in push-pull amplifiers.
  • Applicable for DC choppers.
  • Designed for current regulators.

IXTH26P20P FAQs

6 frequently asked questions generated from this part’s specifications.
What is the maximum drain-source voltage for the IXTH26P20P?

The maximum drain-source voltage (Vdss) is 200V.

What is the continuous drain current of the IXTH26P20P?

The continuous drain current is 26A at 25°C.

What is the on-resistance (Rds(on)) of the IXTH26P20P?

The Rds(on) is a maximum of 170mOhm at 13A and 10V gate-source voltage.

What is the package type for the IXTH26P20P?

The IXTH26P20P is supplied in a TO-247-3 package.

What is the operating temperature range for this MOSFET?

The operating temperature range is -55°C to 175°C.

What is the gate charge of the IXTH26P20P?

The gate charge (Qg) is a maximum of 56 nC at 10V gate-source voltage.

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