| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
1,207 pcs
|
1207 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
| Category | |
| Manufacturer Name | |
| AEC Qualified | |
| Automotive Grade | |
| Current | |
| Drain to Source Voltage (Vdss) | |
| Drive Voltage (Max Rds On, Min Rds On) | |
| FET Type | |
| Gate Charge (Qg) (Max) @ Vgs | |
| Industrial Grade | |
| Input Capacitance (Ciss) (Max) @ Vds | |
| Medical Grade | |
| Military Grade | |
| Mounting Type | |
| Operating Temperature | |
| Power Dissipation (Max) | |
| Rds On (Max) @ Id, Vgs | |
| Supplier Device Package | |
| Supplier Package | |
| Tape & Reel | |
| Technology | |
| Vgs (Max) | |
| Vgs(th) (Max) @ Id |
The IXYS IXTH26P20P is a P-Channel MOSFET with a drain-source voltage (Vdss) of 200V and a continuous drain current (Id) of 26A at 25°C. It offers a low on-resistance (Rds(on)) of 170mOhm at 13A and 10V gate-source voltage, contributing to efficient power handling.
This MOSFET is suitable for applications requiring high-side switching, push-pull amplifiers, DC choppers, and current regulators. It is housed in a TO-247-3 package and supports through-hole mounting. The operating temperature range is -55°C to 175°C.
Key electrical characteristics include a gate charge (Qg) of 56 nC and an input capacitance (Ciss) of 2740 pF. The gate source threshold voltage (Vgs(th)) is a maximum of 4V at 250µA, and the continuous gate source voltage (Vgs) is ±20V. The device is rated for a maximum power dissipation of 300W at 25°C.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.99 | $0.99 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The maximum drain-source voltage (Vdss) is 200V.
The continuous drain current is 26A at 25°C.
The Rds(on) is a maximum of 170mOhm at 13A and 10V gate-source voltage.
The IXTH26P20P is supplied in a TO-247-3 package.
The operating temperature range is -55°C to 175°C.
The gate charge (Qg) is a maximum of 56 nC at 10V gate-source voltage.