IXTH260N055T2 The IXYS IXTH260N055T2 is an N-Channel MOSFET with a 55V drain-source voltage and a continuous current rating of 260A. It features a low Rds On of 3.3mOhm at 10V gate-source voltage.
Mfr Part #:

IXTH260N055T2

Available from 2 distributors
Mfr Name: IXYS
IXYS
The IXYS IXTH260N055T2 is an N-Channel MOSFET with a 55V drain-source voltage and a continuous current rating of 260A. It features a low Rds On of 3.3mOhm at 10V gate-source voltage.
Total Stock: 75,280 pcs
$ Price Range: $0.99

IXTH260N055T2 Available from 2 distributors

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Non-Authorised
Distributor Stock Pricing MOQ PKG Lead Time Date Code On Order Quantity On Order Delivery
Non-Authorised Inventory information
72,100 pcs
72100 pcs On Request 1 On Request On Request 17/18 On Request On Request
Non-Authorised Inventory information
3,180 pcs
3180 pcs On Request 1 On Request On Request 1819+ On Request On Request

IXTH260N055T2 Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
AEC Qualified
Automotive Grade
Current
Drain to Source Voltage (Vdss)
Drive Voltage (Max Rds On, Min Rds On)
FET Type
Gate Charge (Qg) (Max) @ Vgs
Industrial Grade
Input Capacitance (Ciss) (Max) @ Vds
Medical Grade
Military Grade
Mounting Type
Operating Temperature
Power Dissipation (Max)
Rds On (Max) @ Id, Vgs
Supplier Device Package
Tape & Reel
Technology
Vgs (Max)
Vgs(th) (Max) @ Id

IXTH260N055T2 Description

Short technical summary and product information.

This IXYS IXTH260N055T2 is an N-Channel MOSFET designed for high-power applications. It offers a drain-source voltage (Vdss) of 55V and can handle a continuous drain current (Id) of up to 260A at a case temperature (Tc).

 

The MOSFET exhibits a low on-resistance (Rds On) of 3.3mOhm at a gate-source voltage (Vgs) of 10V, ensuring efficient power transfer. Key electrical parameters include an input capacitance (Ciss) of 10800 pF at 25V and a gate charge (Qg) of 140 nC at 10V.

 

With a maximum gate-to-source voltage of ±20V and a gate threshold voltage (Vgs(th)) of 4V at 250µA, it provides robust control. The device operates within a temperature range of -55°C to 175°C (TJ) and has a maximum power dissipation of 480W (Tc).

 

The IXTH260N055T2 is packaged in a TO-247-3 configuration and is designed for through-hole mounting, making it suitable for various industrial and power electronics designs.

IXTH260N055T2 Quick Information

Product Type: MOSFET
Canonical Name: IXYS IXTH260N055T2 N-Channel MOSFET
Subcategory: N-Channel

IXTH260N055T2 Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected

IXTH260N055T2 Estimated Pricing

Qty Low High
1+ $0.99 $0.99

Estimated market price range - modelled values for guidance only, not live distributor offers.

IXTH260N055T2 Features

  • 55V drain-source voltage rating.
  • 260A continuous current capability.
  • Low 3.3mOhm Rds On.
  • Wide -55°C to 175°C operating temperature.
  • TO-247 through-hole package.

IXTH260N055T2 Applications

  • High-power switching applications.
  • Industrial motor control.
  • Power supply circuits.
  • Automotive power systems.

IXTH260N055T2 FAQs

5 frequently asked questions generated from this part’s specifications.
What is the maximum drain-source voltage for the IXTH260N055T2?

The maximum drain-source voltage (Vdss) is 55V.

What is the continuous current rating of the IXTH260N055T2?

The continuous current rating is 260A at the case temperature.

What is the on-resistance (Rds On) of this MOSFET?

The Rds On is a maximum of 3.3mOhm when the drain current is 50A and the gate-source voltage is 10V.

What is the operating temperature range for the IXTH260N055T2?

The operating temperature range is -55°C to 175°C (TJ).

How is the IXTH260N055T2 MOSFET packaged and mounted?

It is supplied in a TO-247-3 package and is designed for through-hole mounting.

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