| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
1,249 pcs
|
1249 pcs | On Request | 1 | On Request | On Request | 18+ | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Current | |
| Drain to Source Voltage (Vdss) | |
| Drive Voltage (Max Rds On, Min Rds On) | |
| FET Type | |
| Gate Charge (Qg) (Max) @ Vgs | |
| Input Capacitance (Ciss) (Max) @ Vds | |
| Mounting Type | |
| Operating Temperature | |
| Power Dissipation (Max) | |
| Rds On (Max) @ Id, Vgs | |
| Storage Temperature | |
| Supplier Device Package | |
| Supplier Package | |
| Tape & Reel | |
| Technology | |
| Vgs (Max) | |
| Vgs(th) (Max) @ Id |
This N-Channel MOSFET from IXYS, part number IXTH24N65X2, is suitable for power switching applications. It features a high drain-to-source voltage rating of 650V and can handle a continuous drain current of 24A at case temperature.
The MOSFET has a low on-resistance of 145mOhm maximum at 12A and 10V gate-source voltage. The gate threshold voltage is 5V at 250µA, and the maximum gate-to-source voltage is ±30V. Input capacitance (Ciss) is rated at 2060 pF at 25V.
Designed with a TO-247-3 package, this component utilizes Through Hole mounting. It operates within a temperature range of -55°C to 150°C (TJ) and has a maximum power dissipation of 390W (Tc).
The IXTH24N65X2 is built using MOSFET (Metal Oxide) technology. It is RoHS3 compliant, has an MSL rating of 1, and is REACH unaffected.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.99 | $0.99 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The drain-to-source voltage (Vdss) is 650V.
The maximum continuous drain current is 24A.
The Rds On is a maximum of 145mOhm at 12A drain current and 10V gate-source voltage.
The operating temperature range is -55°C to 150°C (TJ).
This MOSFET is mounted using the Through Hole method.
The component is supplied in a TO-247-3 package.