| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
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102 pcs
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102 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Current | |
| Drain to Source Voltage (Vdss) | |
| Drive Voltage (Max Rds On, Min Rds On) | |
| FET Type | |
| Gate Charge (Qg) (Max) @ Vgs | |
| Input Capacitance (Ciss) (Max) @ Vds | |
| Mounting Type | |
| Operating Temperature | |
| Power Dissipation (Max) | |
| Rds On (Max) @ Id, Vgs | |
| Storage Temperature | |
| Supplier Device Package | |
| Tape & Reel | |
| Technology | |
| Vgs (Max) | |
| Vgs(th) (Max) @ Id |
This IXYS IXTH24N50 is a single N-Channel MOSFET with a drain-source voltage (Vdss) rating of 500V. It is designed for through-hole mounting in a TO-247 package.
The MOSFET offers a continuous drain current of 24A and can dissipate up to 300W of power at the case temperature. Key electrical characteristics include a maximum Rds On of 230mOhm at 12A and 10V, a gate charge (Qg) of 190nC at 10V, and an input capacitance (Ciss) of 4200pF at 25V.
It operates within a temperature range of -55°C to 150°C. The gate-source voltage (Vgs) has a maximum rating of ±20V, with a threshold voltage (Vgs(th)) of 4V at 250µA. The technology used is Metal Oxide Semiconductor Field-Effect Transistor (MOSFET).
This component is suitable for various power switching applications where high voltage and current handling are required. Its through-hole mounting makes it suitable for traditional PCB designs.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.99 | $0.99 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The maximum drain-source voltage (Vdss) for the IXTH24N50 is 500V.
The continuous drain current (Id) for the IXTH24N50 is 24A.
The maximum power dissipation (Pd) for the IXTH24N50 is 300W.
The Rds On (Max) for the IXTH24N50 is 230mOhm at 12A and 10V.
The operating temperature range for the IXTH24N50 is -55°C to 150°C.
The IXTH24N50 is an N-Channel MOSFET.
The IXTH24N50 is designed for through-hole mounting.