| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
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258 pcs
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258 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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The IXYS IXTH20P50P is a P-Channel MOSFET designed for power applications. It features a maximum drain-source breakdown voltage of 500V and can handle a continuous drain current of 20A at a case temperature of Tc.
Key electrical characteristics include a maximum drain-source on-resistance of 450mOhm at 10A and 10V, a gate charge (Qg) of 103nC at 10V, and an input capacitance (Ciss) of 5120pF at 25V. The gate-source threshold voltage (Vgs(th)) is 4V at 250µA, and the maximum gate-source voltage is ±20V.
This MOSFET operates within a temperature range of -55°C to 150°C and has a power dissipation of 460W at Tc. It is constructed using MOSFET (Metal Oxide) technology and is configured as a single P-Channel enhancement mode device.
The IXTH20P50P is supplied in a TO-247-3 package and utilizes a through-hole mounting style. The standard package quantity is 30 units, typically supplied in a tube.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.99 | $0.99 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The maximum drain-source breakdown voltage is 500V.
The continuous drain current is 20A.
The maximum Rds On is 450mOhm at 10A and 10V.
The gate charge is 103nC at 10V.
The operating temperature range is -55°C to 150°C.
It is supplied in a TO-247-3 package.
It uses a through-hole mounting style.