| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
11 pcs
|
11 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
| Category | |
| Manufacturer Name | |
| AEC Qualified | |
| Automotive Grade | |
| Current | |
| Drain to Source Voltage (Vdss) | |
| Drive Voltage (Max Rds On, Min Rds On) | |
| FET Type | |
| Gate Charge (Qg) (Max) @ Vgs | |
| Industrial Grade | |
| Input Capacitance (Ciss) (Max) @ Vds | |
| Lead Spacing | |
| Medical Grade | |
| Military Grade | |
| Mounting Type | |
| Operating Temperature | |
| Power Dissipation (Max) | |
| Rds On (Max) @ Id, Vgs | |
| Supplier Device Package | |
| Tape & Reel | |
| Technology | |
| Vgs (Max) | |
| Vgs(th) (Max) @ Id |
The IXYS IXTH20N60 is an N-Channel MOSFET with a Metal Oxide semiconductor technology. It is designed to handle a maximum drain-to-source voltage of 600V and can sustain a continuous drain current of 20A at 25°C.
Key electrical characteristics include a maximum on-resistance of 350mOhm at 10A and 10V gate-source voltage, and a gate threshold voltage of 4.5V at 250µA. The device supports a gate drive voltage of 10V and has a maximum gate charge of 170 nC at 10V.
With a maximum power dissipation of 300W (Tc), this MOSFET operates within a temperature range of -55°C to 150°C. It is housed in a TO-247-3 package and utilizes through-hole mounting.
This component is suitable for various power switching applications where high voltage and current handling are required.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.99 | $0.99 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The maximum drain-to-source voltage (Vdss) for the IXTH20N60 is 600 V.
The continuous drain current (Id) for the IXTH20N60 is 20A at 25°C (Tc).
The maximum on-resistance (Rds On) for the IXTH20N60 is 350mOhm when measured at 10A drain current and 10V gate-source voltage.
The IXTH20N60 operates within a temperature range of -55°C to 150°C (TJ).
The IXTH20N60 is an N-Channel MOSFET.
The IXTH20N60 is supplied in a TO-247-3 package.