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IXTH200N10T The IXYS IXTH200N10T is an N-Channel MOSFET designed for high power applications. It features a 100V drain-source voltage and a 200A continuous current rating.
Mfr Part #:

IXTH200N10T

Available from 1 distributors
Mfr Name: IXYS
IXYS
The IXYS IXTH200N10T is an N-Channel MOSFET designed for high power applications. It features a 100V drain-source voltage and a 200A continuous current rating.
✓ Total Stock: 1,089 pcs
$ Price Range: $0.99

IXTH200N10T Available from 1 distributor

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✓ Non-Authorised
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IXTH200N10T Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
Current
Drain to Source Voltage (Vdss)
Drive Voltage (Max Rds On, Min Rds On)
FET Type
Gate Charge (Qg) (Max) @ Vgs
Input Capacitance (Ciss) (Max) @ Vds
Mounting Type
Operating Temperature
Power Dissipation (Max)
Rds On (Max) @ Id, Vgs
Supplier Device Package
Tape & Reel
Technology
Vgs (Max)
Vgs(th) (Max) @ Id
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IXTH200N10T Description

Short technical summary and product information.

The IXYS IXTH200N10T is a single N-Channel MOSFET from IXYS, designed for robust performance in demanding applications. This component offers a high drain-source voltage (Vdss) of 100V and can handle a continuous current of 200A at the case temperature.

 

Key electrical characteristics include a maximum on-resistance (Rds On) of 5.5mOhm at 50A and 10V, a gate charge (Qg) of 152 nC at 10V, and an input capacitance (Ciss) of 9400 pF at 25V. The gate threshold voltage (Vgs(th)) is 4.5V at 250µA, with a maximum gate-source voltage (Vgs) of ±30V.

 

This MOSFET operates within a wide temperature range of -55°C to 175°C (TJ). It is packaged in a TO-247-3 case and features through-hole mounting, making it suitable for various power electronics designs.

 

The IXTH200N10T utilizes MOSFET technology and is rated for a maximum power dissipation of 550W at the case temperature.

IXTH200N10T Quick Information

Product Type: MOSFET
Canonical Name: IXYS IXTH200N10T N-Channel MOSFET
Subcategory: Single

IXTH200N10T Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected

IXTH200N10T Estimated Pricing

Qty Low High
1+ $0.99 $0.99

Estimated market price range - modelled values for guidance only, not live distributor offers.

IXTH200N10T Features

  • 100V drain-source voltage rating.
  • 200A continuous current capability.
  • Low 5.5mOhm maximum on-resistance.
  • TO-247-3 package for through-hole mounting.
  • Wide -55°C to 175°C operating temperature.

IXTH200N10T Applications

  • High-power switching applications.
  • Power supply designs.
  • Motor control circuits.
  • Industrial power systems.

IXTH200N10T FAQs

6 frequently asked questions generated from this part’s specifications.
What is the maximum drain-source voltage for the IXTH200N10T?

The maximum drain-source voltage (Vdss) is 100V.

What is the continuous current rating of the IXTH200N10T?

The continuous current rating is 200A at the case temperature.

What is the maximum on-resistance for this MOSFET?

The maximum on-resistance (Rds On) is 5.5mOhm when tested at 50A and 10V.

What is the operating temperature range for the IXTH200N10T?

The operating temperature range is -55°C to 175°C (TJ).

What package type is the IXTH200N10T supplied in?

It is supplied in a TO-247-3 package.

How is the IXTH200N10T mounted?

The IXTH200N10T is mounted using the through-hole method.

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