| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
60 pcs
|
60 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
| Category | |
| Manufacturer Name | |
| AEC Qualified | |
| Automotive Grade | |
| Current | |
| Drain to Source Voltage (Vdss) | |
| Drive Voltage (Max Rds On, Min Rds On) | |
| FET Type | |
| Gate Charge (Qg) (Max) @ Vgs | |
| Industrial Grade | |
| Input Capacitance (Ciss) (Max) @ Vds | |
| Medical Grade | |
| Military Grade | |
| Mounting Type | |
| Operating Temperature | |
| Power Dissipation (Max) | |
| Rds On (Max) @ Id, Vgs | |
| Supplier Device Package | |
| Supplier Package | |
| Tape & Reel | |
| Technology | |
| Vgs (Max) | |
| Vgs(th) (Max) @ Id |
The IXYS IXTH160N10T is a high-performance N-Channel MOSFET designed for power applications. It offers a robust 100V drain-to-source voltage and can handle a continuous drain current of 160A at 25°C.
Key electrical characteristics include a low on-resistance of 7mOhm at 25A and 10V gate drive voltage, and a gate threshold voltage of 4.5V at 250µA. The device has a maximum gate-source voltage rating of ±30V and an input capacitance of 6600 pF at 25V.
With a maximum power dissipation of 430W and an operating temperature range of -55°C to 175°C, this MOSFET is suitable for demanding environments. It is packaged in a TO-247-3 through-hole configuration, facilitating easy integration into circuit designs.
The IXTH160N10T is built using Metal Oxide Semiconductor (MOSFET) technology and belongs to the Trench series. Its N-Channel FET type makes it a versatile component for various switching and amplification tasks in power electronics.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.99 | $0.99 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The drain-to-source voltage (Vdss) is 100 V.
The continuous drain current (Id) is 160A at 25°C.
The Rds On is a maximum of 7mOhm at 25A drain current and 10V gate-source voltage.
The operating temperature range is -55°C to 175°C.
It is an N-Channel MOSFET using Metal Oxide Semiconductor technology.
The MOSFET is supplied in a TO-247-3 package and uses through-hole mounting.