IXTH14N80 The IXTH14N80 is an N-Channel MOSFET from IXYS with a drain-source voltage of 800V and a continuous drain current of 14A. It is housed in a Through Hole TO-247 package.
Mfr Part #:

IXTH14N80

Available from 1 distributors
Mfr Name: IXYS
IXYS
The IXTH14N80 is an N-Channel MOSFET from IXYS with a drain-source voltage of 800V and a continuous drain current of 14A. It is housed in a Through Hole TO-247 package.
Total Stock: 27 pcs
$ Price Range: $0.99

IXTH14N80 Available from 1 distributor

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Distributor Stock Pricing MOQ PKG Lead Time Date Code On Order Quantity On Order Delivery
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27 pcs
27 pcs On Request 1 On Request On Request 2026-02-25 06:16:38 On Request On Request

IXTH14N80 Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
Current
Drain to Source Voltage (Vdss)
Drive Voltage (Max Rds On, Min Rds On)
FET Type
Gate Charge (Qg) (Max) @ Vgs
Input Capacitance (Ciss) (Max) @ Vds
Mounting Type
Operating Temperature
Power Dissipation (Max)
Rds On (Max) @ Id, Vgs
Storage Temperature
Supplier Device Package
Tape & Reel
Technology
Vgs (Max)
Vgs(th) (Max) @ Id

IXTH14N80 Description

Short technical summary and product information.

This IXTH14N80 MOSFET from IXYS is an N-Channel device designed for various electronic applications. It features a high drain-to-source voltage rating of 800V and can handle a continuous drain current of 14A at 25°C. The on-resistance (Rds On) is specified as a maximum of 700mOhm at a gate-source voltage of 10V and a drain current of 500mA.

 

The MOSFET operates with a gate drive voltage of 10V and has a gate threshold voltage of 4.5V at 250µA. Its input capacitance (Ciss) is a maximum of 4500pF at 25V, and the gate charge (Qg) is 170nC at 10V. The maximum continuous gate-source voltage is ±20V.

 

With a maximum power dissipation of 300W, this component is suitable for applications requiring significant power handling. It operates within a temperature range of -55°C to 150°C (TJ). The device is mounted using the Through Hole method and comes in a TO-247-3 package.

IXTH14N80 Quick Information

Product Type: MOSFET
Series: MegaMOS™
Canonical Name: IXTH14N80 N-Channel MOSFET
Subcategory: N-Channel

IXTH14N80 Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected

IXTH14N80 Estimated Pricing

Qty Low High
1+ $0.99 $0.99

Estimated market price range - modelled values for guidance only, not live distributor offers.

IXTH14N80 Features

  • 800V drain-source voltage rating.
  • 14A continuous drain current capability.
  • 700mOhm maximum on-resistance.
  • N-Channel MOSFET technology.
  • Through Hole TO-247 package.

IXTH14N80 Applications

  • Suitable for high voltage applications.
  • Ideal for power switching circuits.
  • Used in power supply designs.
  • Component for industrial controls.

IXTH14N80 FAQs

6 frequently asked questions generated from this part’s specifications.
What is the maximum drain-source voltage for the IXTH14N80?

The maximum drain-source voltage (Vdss) for the IXTH14N80 is 800V.

What is the continuous drain current of the IXTH14N80?

The continuous drain current (Id) for the IXTH14N80 is 14A.

What is the maximum on-resistance (Rds On) for the IXTH14N80?

The maximum Rds On for the IXTH14N80 is 700mOhm at a drain current of 500mA and gate-source voltage of 10V.

What is the operating temperature range for the IXTH14N80?

The operating temperature range for the IXTH14N80 is -55°C to 150°C (TJ).

What type of MOSFET is the IXTH14N80?

The IXTH14N80 is an N-Channel MOSFET.

What package is the IXTH14N80 supplied in?

The IXTH14N80 is supplied in a TO-247-3 package.

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