| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
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3,000 pcs
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3000 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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| Input Capacitance | |
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| Supplier Device Package | |
| Technology |
The IXTH12N150 is an N-Channel MOSFET manufactured by CreeLED, Inc. This component is designed for high voltage applications, featuring a Drain to Source Voltage (Vdss) of 1500V and a continuous drain current (Id) of 12A at 25°C.
Key electrical characteristics include a maximum Rds On of 2 Ohms at 6A and 10V, a gate threshold voltage (Vgs(th)) of 4.5V maximum at 250µA, and a maximum gate-source voltage of ±30V. The input capacitance (Ciss) is rated at a maximum of 3720pF at 25V.
With a maximum power dissipation of 890W (Tc) and an operating temperature range of -55°C to 150°C, this MOSFET is suitable for demanding thermal environments. It is packaged in a TO-247-3 through-hole configuration.
This MOSFET utilizes Metal Oxide technology and is identified by its N-Channel FET type. The part status is active.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.71 | $0.71 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The maximum Drain to Source Voltage is 1500V.
The continuous drain current at 25°C is 12A.
The maximum Rds On is 2 Ohm at 6A, 10V.
The operating temperature range is -55°C to 150°C.
The IXTH12N150 is an N-Channel MOSFET.
The IXTH12N150 is supplied in a TO-247-3 package.