IXTH12N150 The IXYS IXTH12N150 is an N-Channel MOSFET designed for high voltage applications. It features a 1500V drain-to-source voltage and a continuous drain current of 12A.
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IXTH12N150

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Mfr Name: IXYS
IXYS
The IXYS IXTH12N150 is an N-Channel MOSFET designed for high voltage applications. It features a 1500V drain-to-source voltage and a continuous drain current of 12A.
Total Stock: 4 pcs
$ Price Range: $0.99

IXTH12N150 Available from 1 distributor

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IXTH12N150 Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
Current
Drain to Source Voltage (Vdss)
Drive Voltage (Max Rds On, Min Rds On)
FET Type
Gate Charge (Qg) (Max) @ Vgs
Input Capacitance (Ciss) (Max) @ Vds
Mounting Type
Operating Temperature
Power Dissipation (Max)
Rds On (Max) @ Id, Vgs
Supplier Device Package
Tape & Reel
Technology
Vgs (Max)
Vgs(th) (Max) @ Id

IXTH12N150 Description

Short technical summary and product information.

The IXYS IXTH12N150 is an N-Channel MOSFET belonging to the Metal Oxide Semiconductor Field-Effect Transistor technology. It is designed for high-voltage applications, offering a maximum drain-to-source voltage (Vdss) of 1500V. The continuous drain current (Id) at 25°C is rated at 12A (Tc), with a maximum power dissipation of 890W (Tc).

 

Key electrical characteristics include a maximum on-resistance (Rds On) of 2 Ohms at 6A and 10V gate drive voltage. The gate threshold voltage (Vgs(th)) is a maximum of 4.5V at 250µA. Input capacitance (Ciss) is up to 3720pF at 25V, and the maximum gate charge (Qg) is 106nC at 10V. The maximum gate-source voltage (Vgs) is ±30V.

 

This MOSFET operates within a temperature range of -55°C to 150°C (TJ). It is mounted via a through-hole method and comes in a TO-247-3 package, specifically the TO-247 (IXTH) supplier device package. The packaging format is Tube.

 

Environmental compliance includes RoHS3 compliance, an MSL of 1 Unlimited, and REACH Unaffected status. These specifications make the IXTH12N150 suitable for various power switching and high-voltage applications.

IXTH12N150 Quick Information

Product Type: MOSFET
Canonical Name: IXYS IXTH12N150 N-Channel MOSFET
Subcategory: N-Channel

IXTH12N150 Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected

IXTH12N150 Estimated Pricing

Qty Low High
1+ $0.99 $0.99

Estimated market price range - modelled values for guidance only, not live distributor offers.

IXTH12N150 Features

  • 1500V drain-to-source voltage rating.
  • 12A continuous drain current capability.
  • Low 2 Ohm maximum on-resistance.
  • TO-247 package for through-hole mounting.
  • Wide -55°C to 150°C operating temperature.

IXTH12N150 Applications

  • Suitable for high-voltage power switching.
  • Used in power supply circuits.
  • Ideal for industrial applications.
  • Component in motor control systems.

IXTH12N150 FAQs

5 frequently asked questions generated from this part’s specifications.
What is the maximum drain-to-source voltage for the IXTH12N150?

The maximum drain-to-source voltage (Vdss) is 1500V.

What is the continuous drain current at 25°C?

The continuous drain current (Id) at 25°C is 12A (Tc).

What is the maximum on-resistance of the IXTH12N150?

The maximum on-resistance (Rds On) is 2 Ohms at 6A and 10V.

What is the operating temperature range?

The operating temperature range is -55°C to 150°C (TJ).

What package type is the IXTH12N150 supplied in?

The IXTH12N150 is supplied in a TO-247-3 package, specifically the TO-247 (IXTH) supplier device package, and is mounted through hole.

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