| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
2 pcs
|
2 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Current | |
| Drain to Source Voltage (Vdss) | |
| Drive Voltage (Max Rds On, Min Rds On) | |
| FET Type | |
| Gate Charge (Qg) (Max) @ Vgs | |
| Input Capacitance (Ciss) (Max) @ Vds | |
| Mounting Type | |
| Operating Temperature | |
| Power Dissipation (Max) | |
| Rds On (Max) @ Id, Vgs | |
| Supplier Device Package | |
| Supplier Package | |
| Tape & Reel | |
| Technology | |
| Vgs (Max) | |
| Vgs(th) (Max) @ Id |
This IXYS IXTH12N100L is a single N-Channel MOSFET with a maximum drain-to-source voltage of 1000V and a continuous current rating of 12A at case temperature.
Key electrical characteristics include a maximum on-resistance (Rds On) of 1.3 Ohms at 500mA and 20V gate drive voltage. The gate threshold voltage (Vgs(th)) is 5V at 250µA, and the maximum gate-to-source voltage is ±30V. Input capacitance (Ciss) is 2500 pF at 25V, and gate charge (Qg) is 155 nC at 20V.
With a maximum power dissipation of 400W (Tc), this MOSFET operates between -55°C and 150°C (TJ). It is packaged in a TO-247-3 case and utilizes through-hole mounting.
This component is suitable for various power switching applications where high voltage and moderate current handling are required.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.99 | $0.99 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The maximum drain-to-source voltage (Vdss) for the IXTH12N100L is 1000 V.
The IXTH12N100L has a continuous current rating of 12A (Tc).
The Rds On (Max) for the IXTH12N100L is 1.3 Ohm at an Id of 500mA and Vgs of 20V.
The operating temperature range for the IXTH12N100L is -55°C to 150°C (TJ).
The IXTH12N100L is available in a TO-247-3 package.
The IXTH12N100L is mounted using the Through Hole method.