| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
72 pcs
|
72 pcs | On Request | 1 | On Request | On Request | 2026-02-25 06:16:38 | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Current | |
| Drain to Source Voltage (Vdss) | |
| Drive Voltage (Max Rds On, Min Rds On) | |
| FET Type | |
| Gate Charge (Qg) (Max) @ Vgs | |
| Input Capacitance (Ciss) (Max) @ Vds | |
| Mounting Type | |
| Operating Temperature | |
| Power Dissipation (Max) | |
| Rds On (Max) @ Id, Vgs | |
| Supplier Device Package | |
| Tape & Reel | |
| Technology | |
| Vgs (Max) | |
| Vgs(th) (Max) @ Id |
The IXTH11P50 is a P-Channel MOSFET manufactured by IXYS, designed for power switching applications requiring high voltage capability. It offers a maximum drain-to-source voltage (Vdss) of 500V and a continuous drain current (Id25) of 11A at 25°C.
This MOSFET utilizes the HDMOSTM process for low on-resistance, specified at a maximum of 0.75 Ohms at 5.5A and 10V gate-source voltage. The operating junction temperature ranges from -55°C to +150°C, with a maximum power dissipation of 300W at 25°C.
Packaged in the standard TO-247-3 configuration, the IXTH11P50 is suitable for through-hole mounting. Key electrical characteristics include a gate threshold voltage of -3.0V to -5.0V and a gate charge (Qg) of 130 nC at 10V.
Features such as avalanche rating and low package inductance make it suitable for various power management circuits. The device also includes a source-drain diode with a reverse recovery time (trr) of 500 ns.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.99 | $0.99 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The maximum drain-to-source voltage (Vdss) for the IXTH11P50 is 500V.
The continuous drain current (Id25) for the IXTH11P50 is 11A at 25°C.
The maximum on-resistance (Rds(on)) for the IXTH11P50 is 0.75 Ohms when tested at 5.5A and 10V gate-source voltage.
The operating junction temperature range for the IXTH11P50 is -55°C to +150°C.
The IXTH11P50 is supplied in a TO-247-3 package.
The RoHS status is RoHS3 Compliant.